Determining the generation profile for silicon solar cells from lumped optical parameters

Andreas Fell, Keith R. McIntosh

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    6 Citations (Scopus)

    Abstract

    An optical model for silicon solar cells that determines the generation profile G from the lumped parameters front surface transmission Text and pathlength enhancement Z is investigated. Simpler than the well-known 'Basore model', it links effective (measurable) optical and electrical characteristics of solar cells with G. By comparisons against ray tracing the model is found to be accurate for typical wafer-based silicon solar cells, with the error in short-circuit current density being less than 0.1 mA/cm2 for a wide range of conditions. The model provides a minimalistic way to calculate G from the characterization of finished cells, and a short-cut for ray tracing, which calculates Text and Z with significantly less computational effort than G. In combination with a recently proposed thickness-independent parameterization of Z, it enables simple, rapid and accurate sweeping of cell thickness within solar cell device modeling.

    Original languageEnglish
    Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781479979448
    DOIs
    Publication statusPublished - 14 Dec 2015
    Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
    Duration: 14 Jun 201519 Jun 2015

    Publication series

    Name2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

    Conference

    Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
    Country/TerritoryUnited States
    CityNew Orleans
    Period14/06/1519/06/15

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