Determining wurtzite band structure using optical spectroscopies on single InP nanowires

Karunananda Pemasiri, Saranga Perera, Yuda Wang, Mohammad Montazeri, Howard Jackson, Leigh Smith, Jan Yarrison-Rice, Qian Gao, Hoe Tan, Chennupati Jagadish

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    We use photocurrent spectroscopy, photoluminescence excitation spectroscopy, and photomodulated Rayleigh scattering spectroscopy to study the band structure of hexagonal Wurtzite InP nanowires. Excitations from heavy hole band (A), light hole band (B) and split-off band (C) in the valence band to the conduction bands of single InP Wurtzite nanowires have been observed, revealing the energies of the A, B and C hole bands.

    Original languageEnglish
    Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
    PublisherAmerican Institute of Physics Inc.
    Pages476-477
    Number of pages2
    ISBN (Print)9780735411944
    DOIs
    Publication statusPublished - 2013
    Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
    Duration: 29 Jul 20123 Aug 2012

    Publication series

    NameAIP Conference Proceedings
    Volume1566
    ISSN (Print)0094-243X
    ISSN (Electronic)1551-7616

    Conference

    Conference31st International Conference on the Physics of Semiconductors, ICPS 2012
    Country/TerritorySwitzerland
    CityZurich
    Period29/07/123/08/12

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