@inproceedings{cdbde400cfa7436e9183230a00deb0bd,
title = "Diffusion and defect formation in ion implanted Si nanostructures",
abstract = "Simulations and measurements of ion implantation and diffusion in 20-200 nm Si nanostructures have been carried out. Simulations predict a reduction in transient enhanced diffusion with decreasing nanostructure dimensions and a non-uniform diffusion front. SIMS measurements provide useful information in the near surface region, but for deeper profiling, detailed modeling is required. TEM shows the presence of extended defects in structures as small as 40 nm.",
keywords = "Si nanostructures, defects, ion implantation, transient enhanced diffusion",
author = "Hogg, {S. M.} and P. Kluth and St Lenk and M. Zhang and St Trellenkamp and J. Moers and S. Mantl",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 ; Conference date: 22-09-2002 Through 27-09-2002",
year = "2002",
doi = "10.1109/IIT.2002.1258097",
language = "English",
series = "Proceedings of the International Conference on Ion Implantation Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "682--685",
editor = "Bob Brown and Alford, {Terry L.} and Mike Nastasi and Vella, {Michael C.}",
booktitle = "2002 14th International Conference on Ion Implantation Technology, IIT 2002 - Proceedings",
address = "United States",
}