Diffusion and precipitation in amorphous Si

R. G. Elliman; J. M. Gibson; D. C. Jacobson; J. M. Poate; J. S. Williams

doi:10.1063/1.95563

Diffusion and precipitation in amorphous Si

R. G. Elliman^*, J. M. Gibson, D. C. Jacobson, J. M. Poate, J. S. Williams

^*Corresponding author for this work

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Abstract

The diffusion and precipitation of several ion implanted impurities in amorphous Si have been observed at temperatures of 300-600°C. Typical slow diffusers in crystalline Si, such as As, In, Sb, and Bi, show little or no diffusion at low concentrations. At high concentrations (>1 at. %), they diffuse rapidly with D≳10^-15 cm ²/s in the temperature range 500-600°C. Typical fast diffusers in crystalline Si, such as Cu and Au, diffuse in amorphous Si with D>10 ^-12 cm²/s at 400-600°C. Precipitation has been observed for both the fast and slow diffusers in amorphous Si.

Original language	English
Pages (from-to)	478-480
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	5
DOIs	https://doi.org/10.1063/1.95563
Publication status	Published - 1985
Externally published	Yes

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@article{2654a5f531184df797fe9eeb61677a01,

title = "Diffusion and precipitation in amorphous Si",

abstract = "The diffusion and precipitation of several ion implanted impurities in amorphous Si have been observed at temperatures of 300-600°C. Typical slow diffusers in crystalline Si, such as As, In, Sb, and Bi, show little or no diffusion at low concentrations. At high concentrations (>1 at. %), they diffuse rapidly with D≳10-15 cm 2/s in the temperature range 500-600°C. Typical fast diffusers in crystalline Si, such as Cu and Au, diffuse in amorphous Si with D>10 -12 cm2/s at 400-600°C. Precipitation has been observed for both the fast and slow diffusers in amorphous Si.",

author = "Elliman, {R. G.} and Gibson, {J. M.} and Jacobson, {D. C.} and Poate, {J. M.} and Williams, {J. S.}",

year = "1985",

doi = "10.1063/1.95563",

language = "English",

volume = "46",

pages = "478--480",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Diffusion and precipitation in amorphous Si

AU - Elliman, R. G.

AU - Gibson, J. M.

AU - Jacobson, D. C.

AU - Poate, J. M.

AU - Williams, J. S.

PY - 1985

Y1 - 1985

N2 - The diffusion and precipitation of several ion implanted impurities in amorphous Si have been observed at temperatures of 300-600°C. Typical slow diffusers in crystalline Si, such as As, In, Sb, and Bi, show little or no diffusion at low concentrations. At high concentrations (>1 at. %), they diffuse rapidly with D≳10-15 cm 2/s in the temperature range 500-600°C. Typical fast diffusers in crystalline Si, such as Cu and Au, diffuse in amorphous Si with D>10 -12 cm2/s at 400-600°C. Precipitation has been observed for both the fast and slow diffusers in amorphous Si.

AB - The diffusion and precipitation of several ion implanted impurities in amorphous Si have been observed at temperatures of 300-600°C. Typical slow diffusers in crystalline Si, such as As, In, Sb, and Bi, show little or no diffusion at low concentrations. At high concentrations (>1 at. %), they diffuse rapidly with D≳10-15 cm 2/s in the temperature range 500-600°C. Typical fast diffusers in crystalline Si, such as Cu and Au, diffuse in amorphous Si with D>10 -12 cm2/s at 400-600°C. Precipitation has been observed for both the fast and slow diffusers in amorphous Si.

UR - http://www.scopus.com/inward/record.url?scp=2042462514&partnerID=8YFLogxK

U2 - 10.1063/1.95563

DO - 10.1063/1.95563

M3 - Article

AN - SCOPUS:2042462514

SN - 0003-6951

VL - 46

SP - 478

EP - 480

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Diffusion and precipitation in amorphous Si

Abstract

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