TY - JOUR
T1 - Diffusion of implanted impurities in amorphous Si
AU - Poate, J. M.
AU - Jacobson, D. C.
AU - Williams, J. S.
AU - Elliman, R. G.
AU - Boerma, D. O.
PY - 1987
Y1 - 1987
N2 - The diffusion coefficients of Cu, Ag and Au have been measured in implanted, amorphous Si. The temperature dependences over the range 150-600° C are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV, respectively. Diffusion is concentration dependent. The diffusion coefficients correlate remarkably well, when extrapolated to high temperatures, with the corresponding slower or "substitutional-like" diffusion coefficients in crystalline Si.
AB - The diffusion coefficients of Cu, Ag and Au have been measured in implanted, amorphous Si. The temperature dependences over the range 150-600° C are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV, respectively. Diffusion is concentration dependent. The diffusion coefficients correlate remarkably well, when extrapolated to high temperatures, with the corresponding slower or "substitutional-like" diffusion coefficients in crystalline Si.
UR - http://www.scopus.com/inward/record.url?scp=0022988046&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(87)80095-2
DO - 10.1016/S0168-583X(87)80095-2
M3 - Article
AN - SCOPUS:0022988046
SN - 0168-583X
VL - 19-20
SP - 480
EP - 483
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - PART 2
ER -