Diffusion of implanted impurities in amorphous Si

J. M. Poate; D. C. Jacobson; J. S. Williams; R. G. Elliman; D. O. Boerma

doi:10.1016/S0168-583X(87)80095-2

Diffusion of implanted impurities in amorphous Si

J. M. Poate^*, D. C. Jacobson, J. S. Williams, R. G. Elliman, D. O. Boerma

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

The diffusion coefficients of Cu, Ag and Au have been measured in implanted, amorphous Si. The temperature dependences over the range 150-600° C are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV, respectively. Diffusion is concentration dependent. The diffusion coefficients correlate remarkably well, when extrapolated to high temperatures, with the corresponding slower or "substitutional-like" diffusion coefficients in crystalline Si.

Original language	English
Pages (from-to)	480-483
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	19-20
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0168-583X(87)80095-2
Publication status	Published - 1987
Externally published	Yes

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title = "Diffusion of implanted impurities in amorphous Si",

abstract = "The diffusion coefficients of Cu, Ag and Au have been measured in implanted, amorphous Si. The temperature dependences over the range 150-600° C are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV, respectively. Diffusion is concentration dependent. The diffusion coefficients correlate remarkably well, when extrapolated to high temperatures, with the corresponding slower or {"}substitutional-like{"} diffusion coefficients in crystalline Si.",

author = "Poate, \{J. M.\} and Jacobson, \{D. C.\} and Williams, \{J. S.\} and Elliman, \{R. G.\} and Boerma, \{D. O.\}",

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T1 - Diffusion of implanted impurities in amorphous Si

AU - Poate, J. M.

AU - Jacobson, D. C.

AU - Williams, J. S.

AU - Elliman, R. G.

AU - Boerma, D. O.

PY - 1987

Y1 - 1987

N2 - The diffusion coefficients of Cu, Ag and Au have been measured in implanted, amorphous Si. The temperature dependences over the range 150-600° C are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV, respectively. Diffusion is concentration dependent. The diffusion coefficients correlate remarkably well, when extrapolated to high temperatures, with the corresponding slower or "substitutional-like" diffusion coefficients in crystalline Si.

AB - The diffusion coefficients of Cu, Ag and Au have been measured in implanted, amorphous Si. The temperature dependences over the range 150-600° C are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV, respectively. Diffusion is concentration dependent. The diffusion coefficients correlate remarkably well, when extrapolated to high temperatures, with the corresponding slower or "substitutional-like" diffusion coefficients in crystalline Si.

UR - https://www.scopus.com/pages/publications/0022988046

U2 - 10.1016/S0168-583X(87)80095-2

DO - 10.1016/S0168-583X(87)80095-2

M3 - Article

AN - SCOPUS:0022988046

SN - 0168-583X

VL - 19-20

SP - 480

EP - 483

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - PART 2

ER -

Diffusion of implanted impurities in amorphous Si

Abstract

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