@inproceedings{e9c30653c34640cf8a9e134699fb18ac,
title = "DIFFUSION, SOLUBILITY AND SEGREGATION OF IMPLANTED Cu, Ag AND Au IN AMORPHOUS Si.",
abstract = "The diffusion of Cu, Ag and Au has been measured in implanted, amorphous Si, over the range 150-600 degree C. The diffusion coefficients are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1. 25, 1. 6 and 1. 4 eV respectively. The solubility of Au in amorphous Si was measured to be 6 orders of magnitude greater than crystalline Si at a temperature of 515 degree C. The Cu, Ag and Au are segregated ahead of the moving amorphous-crystalline interface. The presence of Au can increase the velocity of the interface.",
author = "Jacobson, {D. C.} and Elliman, {R. G.} and Gibson, {J. M.} and Olson, {G. L.} and Poate, {J. M.} and Williams, {J. S.}",
year = "1987",
language = "English",
isbn = "0931837405",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "327--332",
editor = "Thompson, {Michael O.} and S.Thomas Picraux and Williams, {James S.}",
booktitle = "Materials Research Society Symposia Proceedings",
note = "Beam-Solid Interact and Transient Processes ; Conference date: 01-12-1986 Through 04-12-1986",
}