TY - JOUR
T1 - Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates
AU - Khayrudinov, Vladislav
AU - Remennyi, Maxim
AU - Raj, Vidur
AU - Alekseev, Prokhor
AU - Matveev, Boris
AU - Lipsanen, Harri
AU - Haggren, Tuomas
AU - Haggren, Tuomas
N1 - Publisher Copyright:
© 2020 American Chemical Society.
PY - 2020/6/23
Y1 - 2020/6/23
N2 - Semiconductor nanowires are routinely grown on high-priced crystalline substrates as it is extremely challenging to grow directly on plastics and flexible substrates due to high-temperature requirements and substrate preparation. At the same time, plastic substrates can offer many advantages such as extremely low price, light weight, mechanical flexibility, shock and thermal resistance, and biocompatibility. We explore the direct growth of high-quality III-V nanowires on flexible plastic substrates by metal-organic vapor phase epitaxy (MOVPE). We synthesize InAs and InP nanowires on polyimide and show that the fabricated NWs are optically active with strong light emission in the mid-infrared range. We create a monolithic flexible nanowire-based p-n junction device on plastic in just two fabrication steps. Overall, we demonstrate that III-V nanowires can be synthesized directly on flexible plastic substrates inside a MOVPE reactor, and we believe that our results will further advance the development of the nanowire-based flexible electronic devices.
AB - Semiconductor nanowires are routinely grown on high-priced crystalline substrates as it is extremely challenging to grow directly on plastics and flexible substrates due to high-temperature requirements and substrate preparation. At the same time, plastic substrates can offer many advantages such as extremely low price, light weight, mechanical flexibility, shock and thermal resistance, and biocompatibility. We explore the direct growth of high-quality III-V nanowires on flexible plastic substrates by metal-organic vapor phase epitaxy (MOVPE). We synthesize InAs and InP nanowires on polyimide and show that the fabricated NWs are optically active with strong light emission in the mid-infrared range. We create a monolithic flexible nanowire-based p-n junction device on plastic in just two fabrication steps. Overall, we demonstrate that III-V nanowires can be synthesized directly on flexible plastic substrates inside a MOVPE reactor, and we believe that our results will further advance the development of the nanowire-based flexible electronic devices.
KW - InAs
KW - MOVPE
KW - flexible substrates
KW - low-temperature growth
KW - plastic substrates
KW - semiconductor nanowires
UR - http://www.scopus.com/inward/record.url?scp=85087093845&partnerID=8YFLogxK
U2 - 10.1021/acsnano.0c03184
DO - 10.1021/acsnano.0c03184
M3 - Article
SN - 1936-0851
VL - 14
SP - 7484
EP - 7491
JO - ACS Nano
JF - ACS Nano
IS - 6
ER -