Direct growth of nickel disilicide nanocrystals in silicon dioxide films

Jong Hwan Yoon; Gyu Hyun Lee; Robert G. Elliman

doi:10.1063/1.2202740

Direct growth of nickel disilicide nanocrystals in silicon dioxide films

Jong Hwan Yoon^*, Gyu Hyun Lee, Robert G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Nickel disilicide (Ni S2) nanocrystals (NCs) have been grown in silicon-rich oxide (Si Ox) films ion implanted with nickel by annealing at 1100 °C. It was found that Ni S2 NCs grew into well-defined single crystalline structures embedded in a Si Ox matrix and were approximately spherical in shape. The size of NCs can be influenced by limiting either the Ni or excess Si concentration. It was found that the resulting NCs could be produced with diameters in the range from 5 to 40 nm in the Si Ox layers with excess Si concentrations of 4-8 at. % implanted with Ni concentrations of 0.1-10 at. %.

Original language	English
Article number	116106
Journal	Journal of Applied Physics
Volume	99
Issue number	11
DOIs	https://doi.org/10.1063/1.2202740
Publication status	Published - 1 Jun 2006

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title = "Direct growth of nickel disilicide nanocrystals in silicon dioxide films",

abstract = "Nickel disilicide (Ni S2) nanocrystals (NCs) have been grown in silicon-rich oxide (Si Ox) films ion implanted with nickel by annealing at 1100 °C. It was found that Ni S2 NCs grew into well-defined single crystalline structures embedded in a Si Ox matrix and were approximately spherical in shape. The size of NCs can be influenced by limiting either the Ni or excess Si concentration. It was found that the resulting NCs could be produced with diameters in the range from 5 to 40 nm in the Si Ox layers with excess Si concentrations of 4-8 at. % implanted with Ni concentrations of 0.1-10 at. %.",

author = "Yoon, {Jong Hwan} and Lee, {Gyu Hyun} and Elliman, {Robert G.}",

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AU - Yoon, Jong Hwan

AU - Lee, Gyu Hyun

AU - Elliman, Robert G.

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N2 - Nickel disilicide (Ni S2) nanocrystals (NCs) have been grown in silicon-rich oxide (Si Ox) films ion implanted with nickel by annealing at 1100 °C. It was found that Ni S2 NCs grew into well-defined single crystalline structures embedded in a Si Ox matrix and were approximately spherical in shape. The size of NCs can be influenced by limiting either the Ni or excess Si concentration. It was found that the resulting NCs could be produced with diameters in the range from 5 to 40 nm in the Si Ox layers with excess Si concentrations of 4-8 at. % implanted with Ni concentrations of 0.1-10 at. %.

AB - Nickel disilicide (Ni S2) nanocrystals (NCs) have been grown in silicon-rich oxide (Si Ox) films ion implanted with nickel by annealing at 1100 °C. It was found that Ni S2 NCs grew into well-defined single crystalline structures embedded in a Si Ox matrix and were approximately spherical in shape. The size of NCs can be influenced by limiting either the Ni or excess Si concentration. It was found that the resulting NCs could be produced with diameters in the range from 5 to 40 nm in the Si Ox layers with excess Si concentrations of 4-8 at. % implanted with Ni concentrations of 0.1-10 at. %.

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U2 - 10.1063/1.2202740

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Direct growth of nickel disilicide nanocrystals in silicon dioxide films

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