Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

M. A. Fickenscher; H. E. Jackson; L. M. Smith; J. M. Yarrison-Rice; J. H. Kang; S. Paiman; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1063/1.3671367

Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

M. A. Fickenscher, H. E. Jackson, L. M. Smith^*, J. M. Yarrison-Rice, J. H. Kang, S. Paiman, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We use spatially and temporally resolved photoluminescence to measure exciton diffusion in single zinc blende GaAs/AlGaAs core/shell and mixed phase InP nanowires. Excitons in the single phase GaAs/AlGaAs nanowires are seen to diffuse rapidly throughout the nanowire with a measured diffusion constant ranging from 45 to 100 cm ²/s, while in the mixed phase, InP nanowire electrons and holes are seen to rapidly localize to the quantum confined states in the zinc blende and wurtzite segments, respectively. The diffusion constant in the GaAs/AlGaAs nanowire is similar to the best hole mobilities observed in modulation doped heterostructures.

Original language	English
Article number	263110
Journal	Applied Physics Letters
Volume	99
Issue number	26
DOIs	https://doi.org/10.1063/1.3671367
Publication status	Published - 26 Dec 2011

Access to Document

10.1063/1.3671367

Cite this

@article{f731095eb96f4dfa83865fdd287837bc,

title = "Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires",

abstract = "We use spatially and temporally resolved photoluminescence to measure exciton diffusion in single zinc blende GaAs/AlGaAs core/shell and mixed phase InP nanowires. Excitons in the single phase GaAs/AlGaAs nanowires are seen to diffuse rapidly throughout the nanowire with a measured diffusion constant ranging from 45 to 100 cm 2/s, while in the mixed phase, InP nanowire electrons and holes are seen to rapidly localize to the quantum confined states in the zinc blende and wurtzite segments, respectively. The diffusion constant in the GaAs/AlGaAs nanowire is similar to the best hole mobilities observed in modulation doped heterostructures.",

author = "Fickenscher, {M. A.} and Jackson, {H. E.} and Smith, {L. M.} and Yarrison-Rice, {J. M.} and Kang, {J. H.} and S. Paiman and Q. Gao and Tan, {H. H.} and C. Jagadish",

year = "2011",

month = dec,

day = "26",

doi = "10.1063/1.3671367",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

AU - Fickenscher, M. A.

AU - Jackson, H. E.

AU - Smith, L. M.

AU - Yarrison-Rice, J. M.

AU - Kang, J. H.

AU - Paiman, S.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2011/12/26

Y1 - 2011/12/26

N2 - We use spatially and temporally resolved photoluminescence to measure exciton diffusion in single zinc blende GaAs/AlGaAs core/shell and mixed phase InP nanowires. Excitons in the single phase GaAs/AlGaAs nanowires are seen to diffuse rapidly throughout the nanowire with a measured diffusion constant ranging from 45 to 100 cm 2/s, while in the mixed phase, InP nanowire electrons and holes are seen to rapidly localize to the quantum confined states in the zinc blende and wurtzite segments, respectively. The diffusion constant in the GaAs/AlGaAs nanowire is similar to the best hole mobilities observed in modulation doped heterostructures.

AB - We use spatially and temporally resolved photoluminescence to measure exciton diffusion in single zinc blende GaAs/AlGaAs core/shell and mixed phase InP nanowires. Excitons in the single phase GaAs/AlGaAs nanowires are seen to diffuse rapidly throughout the nanowire with a measured diffusion constant ranging from 45 to 100 cm 2/s, while in the mixed phase, InP nanowire electrons and holes are seen to rapidly localize to the quantum confined states in the zinc blende and wurtzite segments, respectively. The diffusion constant in the GaAs/AlGaAs nanowire is similar to the best hole mobilities observed in modulation doped heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=84863419399&partnerID=8YFLogxK

U2 - 10.1063/1.3671367

DO - 10.1063/1.3671367

M3 - Article

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263110

ER -

Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

Abstract

Access to Document

Other files and links

Fingerprint

Cite this