Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires

Mohammad Montazeri; Melodie Fickenscher; Leigh M. Smith; Howard E. Jackson; Jan Yarrison-Rice; Jung Hyun Kang; Qiang Gao; H. Hoe Tan; Chennupati Jagadish; Yanan Guo; Jin Zou; Mats Erik Pistol; Craig E. Pryor

doi:10.1021/nl903547r

Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires

Mohammad Montazeri, Melodie Fickenscher, Leigh M. Smith, Howard E. Jackson, Jan Yarrison-Rice, Jung Hyun Kang, Qiang Gao, H. Hoe Tan, Chennupati Jagadish, Yanan Guo, Jin Zou, Mats Erik Pistol, Craig E. Pryor

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101 Citations (Scopus)

Abstract

Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations. This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.

Original language	English
Pages (from-to)	880-886
Number of pages	7
Journal	Nano Letters
Volume	10
Issue number	3
DOIs	https://doi.org/10.1021/nl903547r
Publication status	Published - 10 Mar 2010

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10.1021/nl903547r

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@article{574864dd68224bbdab69da302fafe081,

title = "Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires",

abstract = "Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations. This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.",

keywords = "Core-shell nanowires, Photoluminescence, Raman, Strained nanowires",

author = "Mohammad Montazeri and Melodie Fickenscher and Smith, {Leigh M.} and Jackson, {Howard E.} and Jan Yarrison-Rice and Kang, {Jung Hyun} and Qiang Gao and {Hoe Tan}, H. and Chennupati Jagadish and Yanan Guo and Jin Zou and Pistol, {Mats Erik} and Pryor, {Craig E.}",

year = "2010",

month = mar,

day = "10",

doi = "10.1021/nl903547r",

language = "English",

volume = "10",

pages = "880--886",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "3",

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TY - JOUR

T1 - Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires

AU - Montazeri, Mohammad

AU - Fickenscher, Melodie

AU - Smith, Leigh M.

AU - Jackson, Howard E.

AU - Yarrison-Rice, Jan

AU - Kang, Jung Hyun

AU - Gao, Qiang

AU - Hoe Tan, H.

AU - Jagadish, Chennupati

AU - Guo, Yanan

AU - Zou, Jin

AU - Pistol, Mats Erik

AU - Pryor, Craig E.

PY - 2010/3/10

Y1 - 2010/3/10

N2 - Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations. This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.

AB - Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations. This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.

KW - Core-shell nanowires

KW - Photoluminescence

KW - Raman

KW - Strained nanowires

UR - http://www.scopus.com/inward/record.url?scp=77949476701&partnerID=8YFLogxK

U2 - 10.1021/nl903547r

DO - 10.1021/nl903547r

M3 - Article

SN - 1530-6984

VL - 10

SP - 880

EP - 886

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires

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