@inproceedings{6d56607db4094c469e983ab24dc5c23b,
title = "Direct measurement of spectral momentum densities of ordered and disordered semiconductors by high energy EMS",
abstract = "High Energy solid state electron momentum spectroscopy (EMS) is capable of directly measuring spectral functions of ordered and disordered solid matter. In this paper we investigate the spectral functions for the group IV semiconductors Ge and Si. We attempt to resolve the electronic structure differences in amorphous, polycrystalline and crystalline atomic arrangements of the semiconductors. We examine the experimental differences in polycrystalline and amorphous Ge, and draw conclusions as to the similarities/differences between the two states of matter.",
keywords = "Band structure, Electron Momentum Spectroscopy, Electronic structure, Semiconductor",
author = "C. Bowles and Went, {M. R.} and Kheifets, {A. S.} and M. Vos",
year = "2006",
doi = "10.1063/1.2165639",
language = "English",
isbn = "0735403031",
series = "AIP Conference Proceedings",
pages = "167--172",
booktitle = "Proceedings of the International Symposium on (e,2e), Double Photoionization and Related Topics and the 13th International Symposium on Polarization and Correlation in Electronic and Atomic Collisions",
note = "International Symposium on (e,2e), Double Photoionization and Related Topics and the 13th International Symposium on Polarization and Correlation in Electronic and Atomic Collisions ; Conference date: 28-07-2005 Through 30-07-2005",
}