Direct observation of defect levels in InN by soft X-ray absorption spectroscopy

M. Petravic*, P. N.K. Deenapanray, M. D. Fraser, A. V. Soldatov, Y. W. Yang, P. A. Anderson, S. M. Durbin

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    We have used synchrotron-based near-edge X-ray absorption fine structure (NEXAFS) spectroscopy to study the electronic structure of nitrogen-related defects in InN(0001). Several defect levels within the band gap or the conduction band of InN were clearly resolved in NEXAFS spectra around the nitrogen K-edge. We attribute the level observed at 0.3 eV below the conduction band minimum (CBM) to interstitial nitrogen, the level at 1.7 eV above the CBM to antisite nitrogen, and a sharp resonance at 3.2 eV above the CBM to molecular nitrogen, in full agreement with theoretical simulations.

    Original languageEnglish
    Pages (from-to)2984-2987
    Number of pages4
    JournalJournal of Physical Chemistry B
    Volume110
    Issue number7
    DOIs
    Publication statusPublished - 23 Feb 2006

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