Direct observation of voids in the vacancy excess region of ion bombarded silicon

The results reported in this letter indicate that the spatial separation of the vacancy and interstitial excesses which result from ion bombardment gives rise to stable voids upon annealing at 850°C even for implants where the projected ion range is only of the order of a few thousand Ångstrom. Such voids have been observed directly by transmission electron microscopy. Furthermore, in cases where both voids and interstitial-based defects are present at different depths, it is found that Au has a strong preference for decorating void surfaces and hence Au can, indeed, be used as a selective detector of open volume defects in Si.