Dislocation-induced changes in quantum dots: Step alignment and radiative emission

R. Leon; J. O. Okuno; R. A. Lawton; M. Stevens-Kalceff; M. R. Phillips; J. Zou; D. J.H. Cockayne; C. Lobo

doi:10.1063/1.123831

Dislocation-induced changes in quantum dots: Step alignment and radiative emission

R. Leon^*, J. O. Okuno, R. A. Lawton, M. Stevens-Kalceff, M. R. Phillips, J. Zou, D. J.H. Cockayne, C. Lobo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A new type of quantum dot (QD) alignment for an InGaAs/GaAs QD multilayered structure has been observed. In addition to two distinct types of InGaAs dot alignment in vicinal GaAs (001), an abrupt transition in QD sizes and concentrations was seen. This was accompanied by bright QD emission, even after formation of a dislocation array, and different behaviors with thermal intermixing.

Original language	English
Pages (from-to)	2301-2303
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	16
DOIs	https://doi.org/10.1063/1.123831
Publication status	Published - 19 Apr 1999

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@article{7db4548cd14f4ff985f24e7197d5f275,

title = "Dislocation-induced changes in quantum dots: Step alignment and radiative emission",

abstract = "A new type of quantum dot (QD) alignment for an InGaAs/GaAs QD multilayered structure has been observed. In addition to two distinct types of InGaAs dot alignment in vicinal GaAs (001), an abrupt transition in QD sizes and concentrations was seen. This was accompanied by bright QD emission, even after formation of a dislocation array, and different behaviors with thermal intermixing.",

author = "R. Leon and Okuno, {J. O.} and Lawton, {R. A.} and M. Stevens-Kalceff and Phillips, {M. R.} and J. Zou and Cockayne, {D. J.H.} and C. Lobo",

year = "1999",

month = apr,

day = "19",

doi = "10.1063/1.123831",

language = "English",

volume = "74",

pages = "2301--2303",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Dislocation-induced changes in quantum dots

T2 - Step alignment and radiative emission

AU - Leon, R.

AU - Okuno, J. O.

AU - Lawton, R. A.

AU - Stevens-Kalceff, M.

AU - Phillips, M. R.

AU - Zou, J.

AU - Cockayne, D. J.H.

AU - Lobo, C.

PY - 1999/4/19

Y1 - 1999/4/19

N2 - A new type of quantum dot (QD) alignment for an InGaAs/GaAs QD multilayered structure has been observed. In addition to two distinct types of InGaAs dot alignment in vicinal GaAs (001), an abrupt transition in QD sizes and concentrations was seen. This was accompanied by bright QD emission, even after formation of a dislocation array, and different behaviors with thermal intermixing.

AB - A new type of quantum dot (QD) alignment for an InGaAs/GaAs QD multilayered structure has been observed. In addition to two distinct types of InGaAs dot alignment in vicinal GaAs (001), an abrupt transition in QD sizes and concentrations was seen. This was accompanied by bright QD emission, even after formation of a dislocation array, and different behaviors with thermal intermixing.

UR - http://www.scopus.com/inward/record.url?scp=0032613761&partnerID=8YFLogxK

U2 - 10.1063/1.123831

DO - 10.1063/1.123831

M3 - Article

SN - 0003-6951

VL - 74

SP - 2301

EP - 2303

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Dislocation-induced changes in quantum dots: Step alignment and radiative emission

Abstract

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