Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

Hieu T. Nguyen; Young Han; Marco Ernst; Andreas Fell; Evan Franklin; Daniel MacDonald

doi:10.1063/1.4926360

Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

Hieu T. Nguyen^*, Young Han, Marco Ernst, Andreas Fell, Evan Franklin, Daniel MacDonald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the subband-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected, providing a powerful tool to study and optimize laser-doping processes for silicon photovoltaics.

Original language	English
Article number	022101
Journal	Applied Physics Letters
Volume	107
Issue number	2
DOIs	https://doi.org/10.1063/1.4926360
Publication status	Published - 13 Jul 2015

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@article{4b91f15e5085405ab5a5865bb1f35b98,

title = "Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy",

abstract = "We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the subband-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected, providing a powerful tool to study and optimize laser-doping processes for silicon photovoltaics.",

author = "Nguyen, {Hieu T.} and Young Han and Marco Ernst and Andreas Fell and Evan Franklin and Daniel MacDonald",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = jul,

day = "13",

doi = "10.1063/1.4926360",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

AU - Nguyen, Hieu T.

AU - Han, Young

AU - Ernst, Marco

AU - Fell, Andreas

AU - Franklin, Evan

AU - MacDonald, Daniel

PY - 2015/7/13

Y1 - 2015/7/13

N2 - We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the subband-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected, providing a powerful tool to study and optimize laser-doping processes for silicon photovoltaics.

AB - We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the subband-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected, providing a powerful tool to study and optimize laser-doping processes for silicon photovoltaics.

UR - http://www.scopus.com/inward/record.url?scp=85013434346&partnerID=8YFLogxK

U2 - 10.1063/1.4926360

DO - 10.1063/1.4926360

M3 - Article

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022101

ER -

Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

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