Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

Hieu T. Nguyen; Young Han; Marco Ernst; Andreas Fell; Evan Franklin; Daniel MacDonald

doi:10.1063/1.4926360

Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

Hieu T. Nguyen^*, Young Han, Marco Ernst, Andreas Fell, Evan Franklin, Daniel MacDonald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the subband-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected, providing a powerful tool to study and optimize laser-doping processes for silicon photovoltaics.

Original language	English
Article number	022101
Journal	Applied Physics Letters
Volume	107
Issue number	2
DOIs	https://doi.org/10.1063/1.4926360
Publication status	Published - 13 Jul 2015

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abstract = "We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the subband-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected, providing a powerful tool to study and optimize laser-doping processes for silicon photovoltaics.",

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AU - Ernst, Marco

AU - Fell, Andreas

AU - Franklin, Evan

AU - MacDonald, Daniel

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Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy

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