Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2

P. Kluth; B. Johannessen; C. J. Glover; G. J. Foran; M. C. Ridgway

doi:10.1016/j.nimb.2005.06.185

Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO₂

P. Kluth^*, B. Johannessen, C. J. Glover, G. J. Foran, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

13 Citations (Scopus)

Abstract

Au and Cu nanocrystals (NCs) fabricated by ion implantation into thin SiO₂ and annealing were investigated by means of extended X-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy (TEM). In particular, the EXAFS Debye-Waller (D-W) factor is studied as a function of the annealing temperature. An increased D-W factor was observed for annealing temperatures 500 °C and 800 °C with respect to samples as implanted and annealed at 1100 °C. A possible explanation for this behavior could be stress induced plastic deformation due to the different thermal expansion of the metals and the SiO₂.

Original language	English
Pages (from-to)	285-289
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	238
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2005.06.185
Publication status	Published - Aug 2005
Event	Synchrotron Radiation in Materials Science Proceedings of the 4th Conference on Synchrotron Radiation in Materials Science - Duration: 23 Aug 2004 → 25 Aug 2004

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title = "Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2",

abstract = "Au and Cu nanocrystals (NCs) fabricated by ion implantation into thin SiO2 and annealing were investigated by means of extended X-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy (TEM). In particular, the EXAFS Debye-Waller (D-W) factor is studied as a function of the annealing temperature. An increased D-W factor was observed for annealing temperatures 500 °C and 800 °C with respect to samples as implanted and annealed at 1100 °C. A possible explanation for this behavior could be stress induced plastic deformation due to the different thermal expansion of the metals and the SiO2.",

keywords = "Disorder, EXAFS, Ion implantation, Nanocrystals",

author = "P. Kluth and B. Johannessen and Glover, {C. J.} and Foran, {G. J.} and Ridgway, {M. C.}",

year = "2005",

month = aug,

doi = "10.1016/j.nimb.2005.06.185",

language = "English",

volume = "238",

pages = "285--289",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Synchrotron Radiation in Materials Science Proceedings of the 4th Conference on Synchrotron Radiation in Materials Science ; Conference date: 23-08-2004 Through 25-08-2004",

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TY - JOUR

T1 - Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO2

AU - Kluth, P.

AU - Johannessen, B.

AU - Glover, C. J.

AU - Foran, G. J.

AU - Ridgway, M. C.

PY - 2005/8

Y1 - 2005/8

N2 - Au and Cu nanocrystals (NCs) fabricated by ion implantation into thin SiO2 and annealing were investigated by means of extended X-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy (TEM). In particular, the EXAFS Debye-Waller (D-W) factor is studied as a function of the annealing temperature. An increased D-W factor was observed for annealing temperatures 500 °C and 800 °C with respect to samples as implanted and annealed at 1100 °C. A possible explanation for this behavior could be stress induced plastic deformation due to the different thermal expansion of the metals and the SiO2.

AB - Au and Cu nanocrystals (NCs) fabricated by ion implantation into thin SiO2 and annealing were investigated by means of extended X-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy (TEM). In particular, the EXAFS Debye-Waller (D-W) factor is studied as a function of the annealing temperature. An increased D-W factor was observed for annealing temperatures 500 °C and 800 °C with respect to samples as implanted and annealed at 1100 °C. A possible explanation for this behavior could be stress induced plastic deformation due to the different thermal expansion of the metals and the SiO2.

KW - Disorder

KW - EXAFS

KW - Ion implantation

KW - Nanocrystals

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U2 - 10.1016/j.nimb.2005.06.185

DO - 10.1016/j.nimb.2005.06.185

M3 - Conference article

SN - 0168-583X

VL - 238

SP - 285

EP - 289

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - Synchrotron Radiation in Materials Science Proceedings of the 4th Conference on Synchrotron Radiation in Materials Science

Y2 - 23 August 2004 through 25 August 2004

ER -

Disorder in Au and Cu nanocrystals formed by ion implantation into thin SiO₂

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