Disordering of Quantum Structures for Optoelectronic Device Integration

L. Fu; S. Mokkapati; S. Barik; M. Buda; H. H. Tan; C. Jagadish

doi:10.1016/B978-0-44-453153-7.00004-3

Disordering of Quantum Structures for Optoelectronic Device Integration

L. Fu^*, S. Mokkapati, S. Barik, M. Buda, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

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Abstract

The development of future optical communication systems relies heavily on the fabrication of photonic integrated circuits (PICs) and optoelectronic integrated circuits (OEICs) with multiple functionalities, great reliability and robustness, simplified packaging, and reduced cost. Since the first demonstration in early the 1980s, postgrowth disordering of quantum-confined heterostructures such as quantum-wells (QWs) and quantum-dots (QDs) has been extensively researched worldwide as a simple, fl-xible, and low-cost approach for PICs/OEICs. In this chapter, we first review the main disordering techniques developed over last 20-30 years and their application in QW-based optoelectronic device integration. Then we present recent experimental results on disordering of both InGaAs/GaAs (on GaAs substrates) and InAs/InP (on InP substrates) QD materials and devices using the techniques of ion-implantation-induced disordering and impurity-free vacancy disordering.

Original language	English
Title of host publication	Comprehensive Semiconductor Science and Technology
Publisher	Elsevier Inc.
Pages	584-625
Number of pages	42
Volume	1-6
ISBN (Print)	9780444531537
DOIs	https://doi.org/10.1016/B978-0-44-453153-7.00004-3
Publication status	Published - 1 Jan 2011

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title = "Disordering of Quantum Structures for Optoelectronic Device Integration",

abstract = "The development of future optical communication systems relies heavily on the fabrication of photonic integrated circuits (PICs) and optoelectronic integrated circuits (OEICs) with multiple functionalities, great reliability and robustness, simplified packaging, and reduced cost. Since the first demonstration in early the 1980s, postgrowth disordering of quantum-confined heterostructures such as quantum-wells (QWs) and quantum-dots (QDs) has been extensively researched worldwide as a simple, fl-xible, and low-cost approach for PICs/OEICs. In this chapter, we first review the main disordering techniques developed over last 20-30 years and their application in QW-based optoelectronic device integration. Then we present recent experimental results on disordering of both InGaAs/GaAs (on GaAs substrates) and InAs/InP (on InP substrates) QD materials and devices using the techniques of ion-implantation-induced disordering and impurity-free vacancy disordering.",

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AU - Buda, M.

AU - Tan, H. H.

AU - Jagadish, C.

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Disordering of Quantum Structures for Optoelectronic Device Integration

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