Disordering of quantum structures for optoelectronic device integration

The development of future optical communication systems relies heavily on the fabrication of photonic integrated circuits (PICs) and optoelectronic integrated circuits (OEICs) with multiple functionalities, great reliability and robustness, simplified packaging, and reduced cost. Since the first demonstration in early the 1980s, postgrowth disordering of quantum-confined heterostructures such as quantum-wells (QWs) and quantum-dots (QDs) has been extensively researched worldwide as a simple, flexible, and low-cost approach for PICs/OEICs. In this chapter, we first review the main disordering techniques developed over last 20–30 years and their application in QW-based optoelectronic device integration. Then we present recent experimental results on disordering of both InGaAs/GaAs (on GaAs substrates) and InAs/InP (on InP substrates) QD materials and devices using the techniques of ion-implantation-induced disordering and impurity-free vacancy disordering.