Dispersion engineered Ge11.5As24Se64.5 nanowires with a nonlinear parameter of 136W-1m-1 at 1550nm

Xin Gai; Steve Madden; Duk Yong Choi; Douglas Bulla; Barry Luther-Davies

doi:10.1364/OE.18.018866

Dispersion engineered Ge_11.5As₂₄Se_64.5 nanowires with a nonlinear parameter of 136W^-1m^-1 at 1550nm

Xin Gai^*, Steve Madden, Duk Yong Choi, Douglas Bulla, Barry Luther-Davies

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

89 Citations (Scopus)

Abstract

We have fabricated 630 × 500nm nanowires from Ge _11.5As₂₄Se_64.5 chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6dB/cm for the fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136 ± 7W ^-1m^-1 at 1550nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18mm long nanowire pumped by 1ps pulses with peak power of 25W.

Original language	English
Pages (from-to)	18866-18874
Number of pages	9
Journal	Optics Express
Volume	18
Issue number	18
DOIs	https://doi.org/10.1364/OE.18.018866
Publication status	Published - 30 Aug 2010

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title = "Dispersion engineered Ge11.5As24Se64.5 nanowires with a nonlinear parameter of 136W-1m-1 at 1550nm",

abstract = "We have fabricated 630 × 500nm nanowires from Ge 11.5As24Se64.5 chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6dB/cm for the fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136 ± 7W -1m-1 at 1550nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18mm long nanowire pumped by 1ps pulses with peak power of 25W.",

author = "Xin Gai and Steve Madden and Choi, {Duk Yong} and Douglas Bulla and Barry Luther-Davies",

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T1 - Dispersion engineered Ge11.5As24Se64.5 nanowires with a nonlinear parameter of 136W-1m-1 at 1550nm

AU - Gai, Xin

AU - Madden, Steve

AU - Choi, Duk Yong

AU - Bulla, Douglas

AU - Luther-Davies, Barry

PY - 2010/8/30

Y1 - 2010/8/30

N2 - We have fabricated 630 × 500nm nanowires from Ge 11.5As24Se64.5 chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6dB/cm for the fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136 ± 7W -1m-1 at 1550nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18mm long nanowire pumped by 1ps pulses with peak power of 25W.

AB - We have fabricated 630 × 500nm nanowires from Ge 11.5As24Se64.5 chalcogenide glass by electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. The loss of the nanowire was measured to be 2.6dB/cm for the fundamental TM mode. The nonlinear coefficient (γ) was determined to be ≈136 ± 7W -1m-1 at 1550nm by both CW four-wave-mixing (FWM) and modeling. Supercontinuum (SC) was produced in an 18mm long nanowire pumped by 1ps pulses with peak power of 25W.

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DO - 10.1364/OE.18.018866

M3 - Article

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SP - 18866

EP - 18874

JO - Optics Express

JF - Optics Express

IS - 18

ER -

Dispersion engineered Ge_11.5As₂₄Se_64.5 nanowires with a nonlinear parameter of 136W^-1m^-1 at 1550nm

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