Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters

J. Tan*, D. MacDonald, N. Bennett, D. Kong, A. Cuevas, I. Romijn

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    16 Citations (Scopus)

    Abstract

    The degradation of the carrier lifetime in multicrystalline silicon due to the dissolution of metal precipitates during high temperature annealing is well known. This letter presents evidence indicating that the presence of phosphorus emitters during annealing can help reduce this recontamination. Part of the degradation observed is due to increased interstitial iron concentrations caused by the dissolution of iron precipitates during annealing. However, dissolution of other metals also seems to contribute to the reduced carrier lifetimes observed.

    Original languageEnglish
    Article number043505
    JournalApplied Physics Letters
    Volume91
    Issue number4
    DOIs
    Publication statusPublished - 2007

    Fingerprint

    Dive into the research topics of 'Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters'. Together they form a unique fingerprint.

    Cite this