Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters

J. Tan; D. MacDonald; N. Bennett; D. Kong; A. Cuevas; I. Romijn

doi:10.1063/1.2766664

Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters

J. Tan^*
, D. MacDonald
, N. Bennett
, D. Kong
, A. Cuevas
, I. Romijn

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The degradation of the carrier lifetime in multicrystalline silicon due to the dissolution of metal precipitates during high temperature annealing is well known. This letter presents evidence indicating that the presence of phosphorus emitters during annealing can help reduce this recontamination. Part of the degradation observed is due to increased interstitial iron concentrations caused by the dissolution of iron precipitates during annealing. However, dissolution of other metals also seems to contribute to the reduced carrier lifetimes observed.

Original language	English
Article number	043505
Journal	Applied Physics Letters
Volume	91
Issue number	4
DOIs	https://doi.org/10.1063/1.2766664
Publication status	Published - 2007

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title = "Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters",

abstract = "The degradation of the carrier lifetime in multicrystalline silicon due to the dissolution of metal precipitates during high temperature annealing is well known. This letter presents evidence indicating that the presence of phosphorus emitters during annealing can help reduce this recontamination. Part of the degradation observed is due to increased interstitial iron concentrations caused by the dissolution of iron precipitates during annealing. However, dissolution of other metals also seems to contribute to the reduced carrier lifetimes observed.",

author = "J. Tan and D. MacDonald and N. Bennett and D. Kong and A. Cuevas and I. Romijn",

year = "2007",

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T1 - Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters

AU - Tan, J.

AU - MacDonald, D.

AU - Bennett, N.

AU - Kong, D.

AU - Cuevas, A.

AU - Romijn, I.

PY - 2007

Y1 - 2007

N2 - The degradation of the carrier lifetime in multicrystalline silicon due to the dissolution of metal precipitates during high temperature annealing is well known. This letter presents evidence indicating that the presence of phosphorus emitters during annealing can help reduce this recontamination. Part of the degradation observed is due to increased interstitial iron concentrations caused by the dissolution of iron precipitates during annealing. However, dissolution of other metals also seems to contribute to the reduced carrier lifetimes observed.

AB - The degradation of the carrier lifetime in multicrystalline silicon due to the dissolution of metal precipitates during high temperature annealing is well known. This letter presents evidence indicating that the presence of phosphorus emitters during annealing can help reduce this recontamination. Part of the degradation observed is due to increased interstitial iron concentrations caused by the dissolution of iron precipitates during annealing. However, dissolution of other metals also seems to contribute to the reduced carrier lifetimes observed.

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U2 - 10.1063/1.2766664

DO - 10.1063/1.2766664

M3 - Article

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043505

ER -

Dissolution of metal precipitates in multicrystalline silicon during annealing and the protective effect of phosphorus emitters

Abstract

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