DLTS of low-energy hydrogen ion implanted n-Si

Prakash N.K. Deenapanray

doi:10.1016/j.physb.2003.09.242

DLTS of low-energy hydrogen ion implanted n-Si

Prakash N.K. Deenapanray^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have used deep level transient spectroscopy and capacitance-voltage measurements to study the influence of low-energy hydrogen ion implantation on the creation of defects in n-Si. In particular, we have studied the ion fluence dependence of the free carrier compensation at room temperature, and we have measured the generation of VO-H complex and VP-pair in ion implanted samples. The 7.5 keV H ions created defects in the top 0.3 μm of samples, which resulted in carrier compensation to depths exceeding 1 μm. This effect is not due to defects created by ion channeling but is rather due to the migration of defects as demonstrated using binary collision code MARLOWE.

Original language	English
Pages (from-to)	719-723
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.242
Publication status	Published - 31 Dec 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: 28 Jul 2003 → 1 Aug 2003

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10.1016/j.physb.2003.09.242

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title = "DLTS of low-energy hydrogen ion implanted n-Si",

abstract = "We have used deep level transient spectroscopy and capacitance-voltage measurements to study the influence of low-energy hydrogen ion implantation on the creation of defects in n-Si. In particular, we have studied the ion fluence dependence of the free carrier compensation at room temperature, and we have measured the generation of VO-H complex and VP-pair in ion implanted samples. The 7.5 keV H ions created defects in the top 0.3 μm of samples, which resulted in carrier compensation to depths exceeding 1 μm. This effect is not due to defects created by ion channeling but is rather due to the migration of defects as demonstrated using binary collision code MARLOWE.",

keywords = "Deep level transient spectroscopy, Defects, Ion implantation, Silicon",

author = "Deenapanray, {Prakash N.K.}",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.242",

language = "English",

volume = "340-342",

pages = "719--723",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

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TY - JOUR

T1 - DLTS of low-energy hydrogen ion implanted n-Si

AU - Deenapanray, Prakash N.K.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We have used deep level transient spectroscopy and capacitance-voltage measurements to study the influence of low-energy hydrogen ion implantation on the creation of defects in n-Si. In particular, we have studied the ion fluence dependence of the free carrier compensation at room temperature, and we have measured the generation of VO-H complex and VP-pair in ion implanted samples. The 7.5 keV H ions created defects in the top 0.3 μm of samples, which resulted in carrier compensation to depths exceeding 1 μm. This effect is not due to defects created by ion channeling but is rather due to the migration of defects as demonstrated using binary collision code MARLOWE.

AB - We have used deep level transient spectroscopy and capacitance-voltage measurements to study the influence of low-energy hydrogen ion implantation on the creation of defects in n-Si. In particular, we have studied the ion fluence dependence of the free carrier compensation at room temperature, and we have measured the generation of VO-H complex and VP-pair in ion implanted samples. The 7.5 keV H ions created defects in the top 0.3 μm of samples, which resulted in carrier compensation to depths exceeding 1 μm. This effect is not due to defects created by ion channeling but is rather due to the migration of defects as demonstrated using binary collision code MARLOWE.

KW - Deep level transient spectroscopy

KW - Defects

KW - Ion implantation

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0346055269&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.242

DO - 10.1016/j.physb.2003.09.242

M3 - Conference article

SN - 0921-4526

VL - 340-342

SP - 719

EP - 723

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

DLTS of low-energy hydrogen ion implanted n-Si

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