Abstract
A semiconductor device comprises nanocrystalline semiconductor material bounded by a barrier region of dielectric material. Dopants are located in the barrier region adjacent the nanocrystalline material such that when the dopant is activated an atom of the dopant exchanges an electron with the nanocrystalline material to create a majority carrier in the nanocrystalline material. The dopants comprise atoms of an element of the nanocrystalline material.
| Original language | English |
|---|---|
| Type | Patent |
| Media of output | online |
| Publication status | Published - 17 Feb 2011 |