Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

B. C. Johnson; B. J. Villis; J. E. Burgess; N. Stavrias; J. C. McCallum; S. Charnvanichborikarn; J. Wong-Leung; C. Jagadish; J. S. Williams

doi:10.1063/1.4710991

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

B. C. Johnson^*, B. J. Villis, J. E. Burgess, N. Stavrias, J. C. McCallum, S. Charnvanichborikarn, J. Wong-Leung, C. Jagadish, J. S. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175-525 °C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2 meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in samples implanted with either P or Ga. The anneal temperature at which the W line intensity is optimized is sensitive to the dopant concentration and type. Furthermore, dopants which are implanted but not activated prior to low temperature thermal processing are found to have a more detrimental effect on the resulting PL. Splitting of the X line (1039.8 meV) arising from implantation damage induced strain is also observed.

Original language	English
Article number	094910
Journal	Journal of Applied Physics
Volume	111
Issue number	9
DOIs	https://doi.org/10.1063/1.4710991
Publication status	Published - 1 May 2012

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title = "Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon",

abstract = "The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175-525 °C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2 meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in samples implanted with either P or Ga. The anneal temperature at which the W line intensity is optimized is sensitive to the dopant concentration and type. Furthermore, dopants which are implanted but not activated prior to low temperature thermal processing are found to have a more detrimental effect on the resulting PL. Splitting of the X line (1039.8 meV) arising from implantation damage induced strain is also observed.",

author = "Johnson, {B. C.} and Villis, {B. J.} and Burgess, {J. E.} and N. Stavrias and McCallum, {J. C.} and S. Charnvanichborikarn and J. Wong-Leung and C. Jagadish and Williams, {J. S.}",

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AU - Johnson, B. C.

AU - Villis, B. J.

AU - Burgess, J. E.

AU - Stavrias, N.

AU - McCallum, J. C.

AU - Charnvanichborikarn, S.

AU - Wong-Leung, J.

AU - Jagadish, C.

AU - Williams, J. S.

PY - 2012/5/1

Y1 - 2012/5/1

N2 - The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175-525 °C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2 meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in samples implanted with either P or Ga. The anneal temperature at which the W line intensity is optimized is sensitive to the dopant concentration and type. Furthermore, dopants which are implanted but not activated prior to low temperature thermal processing are found to have a more detrimental effect on the resulting PL. Splitting of the X line (1039.8 meV) arising from implantation damage induced strain is also observed.

AB - The dopant dependence of photoluminescence (PL) from interstitial-related centers formed by ion implantation and a subsequent anneal in the range 175-525 °C is presented. The evolution of these centers is strongly effected by interstitial-dopant clustering even in the low temperature regime. There is a significant decrease in the W line (1018.2 meV) PL intensity with increasing B concentration. However, an enhancement is also observed in a narrow fabrication window in samples implanted with either P or Ga. The anneal temperature at which the W line intensity is optimized is sensitive to the dopant concentration and type. Furthermore, dopants which are implanted but not activated prior to low temperature thermal processing are found to have a more detrimental effect on the resulting PL. Splitting of the X line (1039.8 meV) arising from implantation damage induced strain is also observed.

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VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 094910

ER -

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

Abstract

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