Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

B. C. Johnson*, B. J. Villis, J. E. Burgess, N. Stavrias, J. C. McCallum, S. Charnvanichborikarn, J. Wong-Leung, C. Jagadish, J. S. Williams

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Fingerprint

    Dive into the research topics of 'Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon'. Together they form a unique fingerprint.

    Material Science

    Engineering