Doping of silicon carbide by ion implantation

B. G. Svensson; A. Hallën; M. K. Linnarsson; A. Yu Kuznetsov; M. S. Janson; D. Åberg; J. Österman; P. O.Å Persson; L. Hultman; L. Storasta; F. H.C. Carlsson; J. P. Bergman; C. Jagadish; E. Morvan

doi:10.4028/www.scientific.net/msf.353-356.549

Doping of silicon carbide by ion implantation

B. G. Svensson^*, A. Hallën, M. K. Linnarsson, A. Yu Kuznetsov, M. S. Janson, D. Åberg, J. Österman, P. O.Å Persson, L. Hultman, L. Storasta, F. H.C. Carlsson, J. P. Bergman, C. Jagadish, E. Morvan

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

26 Citations (Scopus)

Abstract

A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10⁹ and 10¹⁵ cm^-2 and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (≤10¹⁰ cm^-2) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600°C. However, at higher doses (10¹⁴-10¹⁵ Al/cm²) the rate of defect recombination (annihilation) increases substantially during hot implants (>200°C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000°C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.

Original language	English
Pages (from-to)	549-554
Number of pages	6
Journal	Materials Science Forum
Volume	353-356
DOIs	https://doi.org/10.4028/www.scientific.net/msf.353-356.549
Publication status	Published - 2001

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Svensson, B. G., Hallën, A., Linnarsson, M. K., Kuznetsov, A. Y., Janson, M. S., Åberg, D., Österman, J., Persson, P. O. Å., Hultman, L., Storasta, L., Carlsson, F. H. C., Bergman, J. P., Jagadish, C., & Morvan, E. (2001). Doping of silicon carbide by ion implantation. Materials Science Forum, 353-356, 549-554. https://doi.org/10.4028/www.scientific.net/msf.353-356.549

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title = "Doping of silicon carbide by ion implantation",

abstract = "A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 109 and 1015 cm-2 and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (≤1010 cm-2) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600°C. However, at higher doses (1014-1015 Al/cm2) the rate of defect recombination (annihilation) increases substantially during hot implants (>200°C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000°C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.",

author = "Svensson, {B. G.} and A. Hall{\"e}n and Linnarsson, {M. K.} and Kuznetsov, {A. Yu} and Janson, {M. S.} and D. {\AA}berg and J. {\"O}sterman and Persson, {P. O.{\AA}} and L. Hultman and L. Storasta and Carlsson, {F. H.C.} and Bergman, {J. P.} and C. Jagadish and E. Morvan",

year = "2001",

doi = "10.4028/www.scientific.net/msf.353-356.549",

language = "English",

volume = "353-356",

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journal = "Materials Science Forum",

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T1 - Doping of silicon carbide by ion implantation

AU - Svensson, B. G.

AU - Hallën, A.

AU - Linnarsson, M. K.

AU - Kuznetsov, A. Yu

AU - Janson, M. S.

AU - Åberg, D.

AU - Österman, J.

AU - Persson, P. O.Å

AU - Hultman, L.

AU - Storasta, L.

AU - Carlsson, F. H.C.

AU - Bergman, J. P.

AU - Jagadish, C.

AU - Morvan, E.

PY - 2001

Y1 - 2001

N2 - A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 109 and 1015 cm-2 and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (≤1010 cm-2) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600°C. However, at higher doses (1014-1015 Al/cm2) the rate of defect recombination (annihilation) increases substantially during hot implants (>200°C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000°C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.

AB - A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 109 and 1015 cm-2 and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (≤1010 cm-2) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600°C. However, at higher doses (1014-1015 Al/cm2) the rate of defect recombination (annihilation) increases substantially during hot implants (>200°C), and in these samples one type of structural defect dominates after post-implant annealing at 1700-2000°C. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.

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U2 - 10.4028/www.scientific.net/msf.353-356.549

DO - 10.4028/www.scientific.net/msf.353-356.549

M3 - Conference article

SN - 0255-5476

VL - 353-356

SP - 549

EP - 554

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Doping of silicon carbide by ion implantation

Abstract

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