Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications

W. Lei; P. Parkinson; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472356

Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications

W. Lei^*, P. Parkinson, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al_0.3Ga_0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	53-54
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472356
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472356

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Lei, W., Parkinson, P., Tan, H. H., & Jagadish, C. (2012). Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 53-54). Article 6472356 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472356

@inproceedings{7c920d2fe31746b29d68e65f44a60be6,

title = "Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications",

abstract = "This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.",

author = "W. Lei and P. Parkinson and Tan, {H. H.} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472356",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "53--54",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Lei, W, Parkinson, P, Tan, HH & Jagadish, C 2012, Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472356, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 53-54, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472356

Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications. / Lei, W.; Parkinson, P.; Tan, H. H. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 53-54 6472356 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications

AU - Lei, W.

AU - Parkinson, P.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.

AB - This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.

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U2 - 10.1109/COMMAD.2012.6472356

DO - 10.1109/COMMAD.2012.6472356

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 53

EP - 54

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Lei W, Parkinson P, Tan HH , Jagadish C. Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 53-54. 6472356. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472356

Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications

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