Dynamic annealing in III-nitrides under ion bombardment

S. O. Kucheyev; J. S. Williams; J. Zou; C. Jagadish

doi:10.1063/1.1649459

Dynamic annealing in III-nitrides under ion bombardment

S. O. Kucheyev^*, J. S. Williams, J. Zou, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

60 Citations (SciVal)

Abstract

The damage buildup behavior in Al _xGa _1-xN films bombarded with kilo-electron-volt heavy ions at 77 and 300 K was studied. Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy were used for the study. It was found that the damage buildup behavior at 300 K was essentially similar for all the AlGaN films studied. The results show that an increase in Al content changes the main features of the amorphization behavior and strongly enhances dynamic annealing processes.

Original language	English
Pages (from-to)	3048-3054
Number of pages	7
Journal	Journal of Applied Physics
Volume	95
Issue number	6
DOIs	https://doi.org/10.1063/1.1649459
Publication status	Published - 15 Mar 2004

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title = "Dynamic annealing in III-nitrides under ion bombardment",

abstract = "The damage buildup behavior in Al xGa 1-xN films bombarded with kilo-electron-volt heavy ions at 77 and 300 K was studied. Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy were used for the study. It was found that the damage buildup behavior at 300 K was essentially similar for all the AlGaN films studied. The results show that an increase in Al content changes the main features of the amorphization behavior and strongly enhances dynamic annealing processes.",

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AB - The damage buildup behavior in Al xGa 1-xN films bombarded with kilo-electron-volt heavy ions at 77 and 300 K was studied. Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy were used for the study. It was found that the damage buildup behavior at 300 K was essentially similar for all the AlGaN films studied. The results show that an increase in Al content changes the main features of the amorphization behavior and strongly enhances dynamic annealing processes.

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Dynamic annealing in III-nitrides under ion bombardment

Abstract

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