Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

A. Yu Kuznetsov*, J. Wong-Leung, A. Hallén, C. Jagadish, B. G. Svensson

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    49 Citations (Scopus)

    Abstract

    A strong influence of ion implantation flux on the accumulation of radiation damage observed in SiC was studied. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10 10 -4.9×1013 ions/cm2s), keeping the implantation dose constant at 5×1014Si+/cm 2. The implants were performed at room and elevated temperatures up to 220°C. Two regions for the damage accumulation were observed at the surface and the damage peak for 100 keV Si+ ions. The dynamic annealing effect, having an activation energy of 1.3 eV was detected at 80-160°C.

    Original languageEnglish
    Pages (from-to)7112-7115
    Number of pages4
    JournalJournal of Applied Physics
    Volume94
    Issue number11
    DOIs
    Publication statusPublished - 1 Dec 2003

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