Abstract
A strong influence of ion implantation flux on the accumulation of radiation damage observed in SiC was studied. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10 10 -4.9×1013 ions/cm2s), keeping the implantation dose constant at 5×1014Si+/cm 2. The implants were performed at room and elevated temperatures up to 220°C. Two regions for the damage accumulation were observed at the surface and the damage peak for 100 keV Si+ ions. The dynamic annealing effect, having an activation energy of 1.3 eV was detected at 80-160°C.
Original language | English |
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Pages (from-to) | 7112-7115 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1 Dec 2003 |