Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

A. Yu Kuznetsov; J. Wong-Leung; A. Hallén; C. Jagadish; B. G. Svensson

doi:10.1063/1.1622797

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

A. Yu Kuznetsov^*, J. Wong-Leung, A. Hallén, C. Jagadish, B. G. Svensson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

A strong influence of ion implantation flux on the accumulation of radiation damage observed in SiC was studied. 100 keV Si⁺ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10 ¹⁰ -4.9×10¹³ ions/cm²s), keeping the implantation dose constant at 5×10¹⁴Si⁺/cm ². The implants were performed at room and elevated temperatures up to 220°C. Two regions for the damage accumulation were observed at the surface and the damage peak for 100 keV Si⁺ ions. The dynamic annealing effect, having an activation energy of 1.3 eV was detected at 80-160°C.

Original language	English
Pages (from-to)	7112-7115
Number of pages	4
Journal	Journal of Applied Physics
Volume	94
Issue number	11
DOIs	https://doi.org/10.1063/1.1622797
Publication status	Published - 1 Dec 2003

Access to Document

10.1063/1.1622797

Cite this

@article{ca813fe5ccda439e990dea5d4fe966ac,

title = "Dynamic annealing in ion implanted SiC: Flux versus temperature dependence",

abstract = "A strong influence of ion implantation flux on the accumulation of radiation damage observed in SiC was studied. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10 10 -4.9×1013 ions/cm2s), keeping the implantation dose constant at 5×1014Si+/cm 2. The implants were performed at room and elevated temperatures up to 220°C. Two regions for the damage accumulation were observed at the surface and the damage peak for 100 keV Si+ ions. The dynamic annealing effect, having an activation energy of 1.3 eV was detected at 80-160°C.",

author = "Kuznetsov, \{A. Yu\} and J. Wong-Leung and A. Hall{\'e}n and C. Jagadish and Svensson, \{B. G.\}",

year = "2003",

month = dec,

day = "1",

doi = "10.1063/1.1622797",

language = "English",

volume = "94",

pages = "7112--7115",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Dynamic annealing in ion implanted SiC

T2 - Flux versus temperature dependence

AU - Kuznetsov, A. Yu

AU - Wong-Leung, J.

AU - Hallén, A.

AU - Jagadish, C.

AU - Svensson, B. G.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - A strong influence of ion implantation flux on the accumulation of radiation damage observed in SiC was studied. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10 10 -4.9×1013 ions/cm2s), keeping the implantation dose constant at 5×1014Si+/cm 2. The implants were performed at room and elevated temperatures up to 220°C. Two regions for the damage accumulation were observed at the surface and the damage peak for 100 keV Si+ ions. The dynamic annealing effect, having an activation energy of 1.3 eV was detected at 80-160°C.

AB - A strong influence of ion implantation flux on the accumulation of radiation damage observed in SiC was studied. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10 10 -4.9×1013 ions/cm2s), keeping the implantation dose constant at 5×1014Si+/cm 2. The implants were performed at room and elevated temperatures up to 220°C. Two regions for the damage accumulation were observed at the surface and the damage peak for 100 keV Si+ ions. The dynamic annealing effect, having an activation energy of 1.3 eV was detected at 80-160°C.

UR - https://www.scopus.com/pages/publications/0348157031

U2 - 10.1063/1.1622797

DO - 10.1063/1.1622797

M3 - Article

SN - 0021-8979

VL - 94

SP - 7112

EP - 7115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Abstract

Access to Document

Other files and links

Fingerprint

Cite this