Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells

C. R. Hall; L. V. Dao; K. Koike; S. Sasa; H. H. Tan; M. Inoue; M. Yano; C. Jagadish; J. A. Davis

doi:10.1109/COMMAD.2010.5699771

Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, J. A. Davis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We reveal the dynamics of carrier-induced screening of the internal electric field in ZnO quantum wells. By controlling the potential profile of the quantum wells we demonstrate the ability to tune the excited state lifetimes.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	45-46
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699771
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699771

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Hall, C. R., Dao, L. V., Koike, K., Sasa, S., Tan, H. H., Inoue, M., Yano, M., Jagadish, C., & Davis, J. A. (2010). Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 45-46). Article 5699771 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699771

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title = "Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells",

abstract = "We reveal the dynamics of carrier-induced screening of the internal electric field in ZnO quantum wells. By controlling the potential profile of the quantum wells we demonstrate the ability to tune the excited state lifetimes.",

author = "Hall, {C. R.} and Dao, {L. V.} and K. Koike and S. Sasa and Tan, {H. H.} and M. Inoue and M. Yano and C. Jagadish and Davis, {J. A.}",

year = "2010",

doi = "10.1109/COMMAD.2010.5699771",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "45--46",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Hall, CR, Dao, LV, Koike, K, Sasa, S, Tan, HH, Inoue, M, Yano, M, Jagadish, C & Davis, JA 2010, Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699771, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 45-46, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699771

Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells. / Hall, C. R.; Dao, L. V.; Koike, K. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 45-46 5699771 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells

AU - Hall, C. R.

AU - Dao, L. V.

AU - Koike, K.

AU - Sasa, S.

AU - Tan, H. H.

AU - Inoue, M.

AU - Yano, M.

AU - Jagadish, C.

AU - Davis, J. A.

PY - 2010

Y1 - 2010

N2 - We reveal the dynamics of carrier-induced screening of the internal electric field in ZnO quantum wells. By controlling the potential profile of the quantum wells we demonstrate the ability to tune the excited state lifetimes.

AB - We reveal the dynamics of carrier-induced screening of the internal electric field in ZnO quantum wells. By controlling the potential profile of the quantum wells we demonstrate the ability to tune the excited state lifetimes.

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U2 - 10.1109/COMMAD.2010.5699771

DO - 10.1109/COMMAD.2010.5699771

M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 45

EP - 46

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Hall CR, Dao LV, Koike K, Sasa S, Tan HH, Inoue M et al. Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 45-46. 5699771. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699771

Dynamics of carriers and the influence of the quantum confined stark effect in ZnO/ZnMgO quantum wells

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