Dynamics of light-induced FeB pair dissociation in crystalline silicon

L. J. Geerligs; Daniel Macdonald

doi:10.1063/1.1823587

Dynamics of light-induced FeB pair dissociation in crystalline silicon

L. J. Geerligs^*, Daniel Macdonald

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

The dynamics of light-induced dissociation of iron-boron (FeB) pairs in p-type crystalline silicon is investigated. The dissociation is observed to be a single-exponential process which is balanced with thermal repairing. The dissociation rate is proportional to the square of the carrier generation rate and the inverse square of the FeB concentration. This suggests that the dissociation process involves two recombination or electron capture events. A proportionality constant of 5 × 10^-15 s describes the dissociation rate well in the absence of other significant recombination channels. The dissociation rate decreases in the presence of other recombination channels. These results can be used for reliable detection of iron in silicon devices and materials, and for further elucidation of the electronically driven FeB dissociation reaction.

Original language	English
Article number	3
Pages (from-to)	5227-5229
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	22
DOIs	https://doi.org/10.1063/1.1823587
Publication status	Published - 29 Nov 2004

Access to Document

10.1063/1.1823587

Cite this

@article{ec90d9b2f60b43e2a4501e6451a0a72a,

title = "Dynamics of light-induced FeB pair dissociation in crystalline silicon",

abstract = "The dynamics of light-induced dissociation of iron-boron (FeB) pairs in p-type crystalline silicon is investigated. The dissociation is observed to be a single-exponential process which is balanced with thermal repairing. The dissociation rate is proportional to the square of the carrier generation rate and the inverse square of the FeB concentration. This suggests that the dissociation process involves two recombination or electron capture events. A proportionality constant of 5 × 10-15 s describes the dissociation rate well in the absence of other significant recombination channels. The dissociation rate decreases in the presence of other recombination channels. These results can be used for reliable detection of iron in silicon devices and materials, and for further elucidation of the electronically driven FeB dissociation reaction.",

author = "Geerligs, {L. J.} and Daniel Macdonald",

year = "2004",

month = nov,

day = "29",

doi = "10.1063/1.1823587",

language = "English",

volume = "85",

pages = "5227--5229",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Dynamics of light-induced FeB pair dissociation in crystalline silicon

AU - Geerligs, L. J.

AU - Macdonald, Daniel

PY - 2004/11/29

Y1 - 2004/11/29

N2 - The dynamics of light-induced dissociation of iron-boron (FeB) pairs in p-type crystalline silicon is investigated. The dissociation is observed to be a single-exponential process which is balanced with thermal repairing. The dissociation rate is proportional to the square of the carrier generation rate and the inverse square of the FeB concentration. This suggests that the dissociation process involves two recombination or electron capture events. A proportionality constant of 5 × 10-15 s describes the dissociation rate well in the absence of other significant recombination channels. The dissociation rate decreases in the presence of other recombination channels. These results can be used for reliable detection of iron in silicon devices and materials, and for further elucidation of the electronically driven FeB dissociation reaction.

AB - The dynamics of light-induced dissociation of iron-boron (FeB) pairs in p-type crystalline silicon is investigated. The dissociation is observed to be a single-exponential process which is balanced with thermal repairing. The dissociation rate is proportional to the square of the carrier generation rate and the inverse square of the FeB concentration. This suggests that the dissociation process involves two recombination or electron capture events. A proportionality constant of 5 × 10-15 s describes the dissociation rate well in the absence of other significant recombination channels. The dissociation rate decreases in the presence of other recombination channels. These results can be used for reliable detection of iron in silicon devices and materials, and for further elucidation of the electronically driven FeB dissociation reaction.

UR - http://www.scopus.com/inward/record.url?scp=11044226981&partnerID=8YFLogxK

U2 - 10.1063/1.1823587

DO - 10.1063/1.1823587

M3 - Article

SN - 0003-6951

VL - 85

SP - 5227

EP - 5229

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 3

ER -

Dynamics of light-induced FeB pair dissociation in crystalline silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this