Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation

A. V. Rode; M. Samoc; B. Luther-Davies; E. G. Gamaly; K. F. MacDonald; N. I. Zheludev

doi:10.1364/OL.26.000441

Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation

A. V. Rode^*, M. Samoc, B. Luther-Davies, E. G. Gamaly, K. F. MacDonald, N. I. Zheludev

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an α-Ga/Si interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from R ≅ 0.55, which is typical for α-Ga, to R ≅ 0.8, which is close to that of liquid Ga. The initial step in the reflectivity change of 2-4 ps is resolved with 150-fs laser pulses. The light-induced reflectivity change relaxes during 100 ns-10 μs, depending strongly on the background temperature of the Ga mirror and the laser fluence.

Original language	English
Pages (from-to)	441-443
Number of pages	3
Journal	Optics Letters
Volume	26
Issue number	7
DOIs	https://doi.org/10.1364/OL.26.000441
Publication status	Published - 1 Apr 2001

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title = "Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation",

abstract = "We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an α-Ga/Si interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from R ≅ 0.55, which is typical for α-Ga, to R ≅ 0.8, which is close to that of liquid Ga. The initial step in the reflectivity change of 2-4 ps is resolved with 150-fs laser pulses. The light-induced reflectivity change relaxes during 100 ns-10 μs, depending strongly on the background temperature of the Ga mirror and the laser fluence.",

author = "Rode, {A. V.} and M. Samoc and B. Luther-Davies and Gamaly, {E. G.} and MacDonald, {K. F.} and Zheludev, {N. I.}",

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T1 - Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation

AU - Rode, A. V.

AU - Samoc, M.

AU - Luther-Davies, B.

AU - Gamaly, E. G.

AU - MacDonald, K. F.

AU - Zheludev, N. I.

PY - 2001/4/1

Y1 - 2001/4/1

N2 - We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an α-Ga/Si interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from R ≅ 0.55, which is typical for α-Ga, to R ≅ 0.8, which is close to that of liquid Ga. The initial step in the reflectivity change of 2-4 ps is resolved with 150-fs laser pulses. The light-induced reflectivity change relaxes during 100 ns-10 μs, depending strongly on the background temperature of the Ga mirror and the laser fluence.

AB - We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an α-Ga/Si interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from R ≅ 0.55, which is typical for α-Ga, to R ≅ 0.8, which is close to that of liquid Ga. The initial step in the reflectivity change of 2-4 ps is resolved with 150-fs laser pulses. The light-induced reflectivity change relaxes during 100 ns-10 μs, depending strongly on the background temperature of the Ga mirror and the laser fluence.

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U2 - 10.1364/OL.26.000441

DO - 10.1364/OL.26.000441

M3 - Article

SN - 0146-9592

VL - 26

SP - 441

EP - 443

JO - Optics Letters

JF - Optics Letters

IS - 7

ER -

Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation

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