Dynamics of the ion beam induced nitridation of silicon

Prakash N.K. Deenapanray

doi:10.1116/1.1481045

Dynamics of the ion beam induced nitridation of silicon

Prakash N.K. Deenapanray^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The energy and angular dependence of the ion beam induced nitridation of Si was studied using SIMS and HRRBS. Oscillations in the nitrogen ion signals were obtained for bombardment below θ_c2. The obtained oscillations are directly related to the charging of the surface nitride under ion bombardment. Nitride layer under ion bombardment was treated as a damped oscillatory system.

Original language	English
Pages (from-to)	1261-1269
Number of pages	9
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1481045
Publication status	Published - Jul 2002

Access to Document

10.1116/1.1481045

Cite this

@article{fd4c69c3ce4d4ab28f867942fbc280a6,

title = "Dynamics of the ion beam induced nitridation of silicon",

abstract = "The energy and angular dependence of the ion beam induced nitridation of Si was studied using SIMS and HRRBS. Oscillations in the nitrogen ion signals were obtained for bombardment below θc2. The obtained oscillations are directly related to the charging of the surface nitride under ion bombardment. Nitride layer under ion bombardment was treated as a damped oscillatory system.",

author = "Deenapanray, {Prakash N.K.}",

year = "2002",

month = jul,

doi = "10.1116/1.1481045",

language = "English",

volume = "20",

pages = "1261--1269",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Dynamics of the ion beam induced nitridation of silicon

AU - Deenapanray, Prakash N.K.

PY - 2002/7

Y1 - 2002/7

N2 - The energy and angular dependence of the ion beam induced nitridation of Si was studied using SIMS and HRRBS. Oscillations in the nitrogen ion signals were obtained for bombardment below θc2. The obtained oscillations are directly related to the charging of the surface nitride under ion bombardment. Nitride layer under ion bombardment was treated as a damped oscillatory system.

AB - The energy and angular dependence of the ion beam induced nitridation of Si was studied using SIMS and HRRBS. Oscillations in the nitrogen ion signals were obtained for bombardment below θc2. The obtained oscillations are directly related to the charging of the surface nitride under ion bombardment. Nitride layer under ion bombardment was treated as a damped oscillatory system.

UR - http://www.scopus.com/inward/record.url?scp=0036648371&partnerID=8YFLogxK

U2 - 10.1116/1.1481045

DO - 10.1116/1.1481045

M3 - Article

SN - 0734-2101

VL - 20

SP - 1261

EP - 1269

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Dynamics of the ion beam induced nitridation of silicon

Abstract

Access to Document

Other files and links

Fingerprint

Cite this