Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires

Yujie Chen; Tim Burgess; Xianghai An; Yiu Wing Mai; H. Hoe Tan; Jin Zou; Simon P. Ringer; Chennupati Jagadish; Xiaozhou Liao

doi:10.1021/acs.nanolett.5b05095

Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires

Yujie Chen, Tim Burgess, Xianghai An, Yiu Wing Mai, H. Hoe Tan, Jin Zou, Simon P. Ringer, Chennupati Jagadish, Xiaozhou Liao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

65 Citations (Scopus)

Abstract

Stacking faults (SFs) are commonly observed crystalline defects in III-V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young's moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ compression transmission electron microscopy and finite element analysis. The Young's moduli of both WZ and WZ-SF GaAs NWs were found to increase with decreasing diameter due to the increasing volume fraction of the native oxide shell. The presence of a high density of SFs was further found to increase the Young's modulus by 13%. This stiffening effect of SFs is attributed to the change in the interatomic bonding configuration at the SFs.

Original language	English
Pages (from-to)	1911-1916
Number of pages	6
Journal	Nano Letters
Volume	16
Issue number	3
DOIs	https://doi.org/10.1021/acs.nanolett.5b05095
Publication status	Published - 9 Mar 2016

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title = "Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires",

abstract = "Stacking faults (SFs) are commonly observed crystalline defects in III-V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young's moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ compression transmission electron microscopy and finite element analysis. The Young's moduli of both WZ and WZ-SF GaAs NWs were found to increase with decreasing diameter due to the increasing volume fraction of the native oxide shell. The presence of a high density of SFs was further found to increase the Young's modulus by 13%. This stiffening effect of SFs is attributed to the change in the interatomic bonding configuration at the SFs.",

keywords = "GaAs nanowires, Young's modulus, in situ deformation, stacking faults, transmission electron microscopy",

author = "Yujie Chen and Tim Burgess and Xianghai An and Mai, {Yiu Wing} and Tan, {H. Hoe} and Jin Zou and Ringer, {Simon P.} and Chennupati Jagadish and Xiaozhou Liao",

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AU - Chen, Yujie

AU - Burgess, Tim

AU - An, Xianghai

AU - Mai, Yiu Wing

AU - Tan, H. Hoe

AU - Zou, Jin

AU - Ringer, Simon P.

AU - Jagadish, Chennupati

AU - Liao, Xiaozhou

PY - 2016/3/9

Y1 - 2016/3/9

N2 - Stacking faults (SFs) are commonly observed crystalline defects in III-V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young's moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ compression transmission electron microscopy and finite element analysis. The Young's moduli of both WZ and WZ-SF GaAs NWs were found to increase with decreasing diameter due to the increasing volume fraction of the native oxide shell. The presence of a high density of SFs was further found to increase the Young's modulus by 13%. This stiffening effect of SFs is attributed to the change in the interatomic bonding configuration at the SFs.

AB - Stacking faults (SFs) are commonly observed crystalline defects in III-V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young's moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ compression transmission electron microscopy and finite element analysis. The Young's moduli of both WZ and WZ-SF GaAs NWs were found to increase with decreasing diameter due to the increasing volume fraction of the native oxide shell. The presence of a high density of SFs was further found to increase the Young's modulus by 13%. This stiffening effect of SFs is attributed to the change in the interatomic bonding configuration at the SFs.

KW - GaAs nanowires

KW - Young's modulus

KW - in situ deformation

KW - stacking faults

KW - transmission electron microscopy

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DO - 10.1021/acs.nanolett.5b05095

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JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires

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