Effect of a post-deposition anneal ON Al2O3/Si interface properties

J. Benick; A. Richter; T. T.A. Li; N. E. Grant; K. R. McIntosh; Y. Ren; K. J. Weber; M. Hermle; S. W. Glunz

doi:10.1109/PVSC.2010.5614148

Effect of a post-deposition anneal ON Al₂O₃/Si interface properties

J. Benick^*, A. Richter, T. T.A. Li, N. E. Grant, K. R. McIntosh, Y. Ren, K. J. Weber, M. Hermle, S. W. Glunz

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

63 Citations (Scopus)

Abstract

While Al₂O₃ has been proven to provide an excellent level of surface passivation on all sorts of p-type doped silicon surfaces, the passivation mechanism of this layer and especially the influence of the post-deposition anneal on the Al₂O₃/Si interface properties is not yet completely understood. A great increase in the surface passivation is observed after a post-deposition anneal, i.e. a postdeposition anneal is mandatory to activate the surface passivation. Thus, the influence of this anneal on the interface properties, density of negative fixed charges Q_f and density of interface traps D_it, will be investigated and correlated to the measured minority carrier lifetime. In the case of plasma enhanced ALD, Q_f is already high in the as-deposited state and the annealing process only has a minor effect on Q_f (Q _f increases by 20-50 %, depending on the annealing temperature). The D_it however is strongly reduced by the post-deposition anneal, decreasing by two orders of magnitude. This large reduction in D_it is a prerequisite for benefiting from the strong field effect induced by the high density of negative charges of the Al₂O₃.

Original language	English
Title of host publication	Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Pages	891-896
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2010.5614148
Publication status	Published - 2010
Event	35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/Territory	United States
City	Honolulu, HI
Period	20/06/10 → 25/06/10

Access to Document

10.1109/PVSC.2010.5614148

Cite this

Benick, J., Richter, A., Li, T. T. A., Grant, N. E., McIntosh, K. R., Ren, Y., Weber, K. J., Hermle, M., & Glunz, S. W. (2010). Effect of a post-deposition anneal ON Al₂O₃/Si interface properties. In Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 (pp. 891-896). Article 5614148 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2010.5614148

@inproceedings{1fc9f94ab6e6454ba29edef4b9affa4a,

title = "Effect of a post-deposition anneal ON Al2O3/Si interface properties",

abstract = "While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-type doped silicon surfaces, the passivation mechanism of this layer and especially the influence of the post-deposition anneal on the Al2O3/Si interface properties is not yet completely understood. A great increase in the surface passivation is observed after a post-deposition anneal, i.e. a postdeposition anneal is mandatory to activate the surface passivation. Thus, the influence of this anneal on the interface properties, density of negative fixed charges Qf and density of interface traps Dit, will be investigated and correlated to the measured minority carrier lifetime. In the case of plasma enhanced ALD, Qf is already high in the as-deposited state and the annealing process only has a minor effect on Qf (Q f increases by 20-50 %, depending on the annealing temperature). The Dit however is strongly reduced by the post-deposition anneal, decreasing by two orders of magnitude. This large reduction in Dit is a prerequisite for benefiting from the strong field effect induced by the high density of negative charges of the Al2O3.",

author = "J. Benick and A. Richter and Li, {T. T.A.} and Grant, {N. E.} and McIntosh, {K. R.} and Y. Ren and Weber, {K. J.} and M. Hermle and Glunz, {S. W.}",

year = "2010",

doi = "10.1109/PVSC.2010.5614148",

language = "English",

isbn = "9781424458912",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "891--896",

booktitle = "Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010",

note = "35th IEEE Photovoltaic Specialists Conference, PVSC 2010 ; Conference date: 20-06-2010 Through 25-06-2010",

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Benick, J, Richter, A, Li, TTA, Grant, NE, McIntosh, KR, Ren, Y, Weber, KJ, Hermle, M & Glunz, SW 2010, Effect of a post-deposition anneal ON Al₂O₃/Si interface properties. in Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010., 5614148, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 891-896, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, United States, 20/06/10. https://doi.org/10.1109/PVSC.2010.5614148

Effect of a post-deposition anneal ON Al₂O₃/Si interface properties. / Benick, J.; Richter, A.; Li, T. T.A. et al.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 891-896 5614148 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Richter, A.

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AU - Grant, N. E.

AU - McIntosh, K. R.

AU - Ren, Y.

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AU - Hermle, M.

AU - Glunz, S. W.

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N2 - While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-type doped silicon surfaces, the passivation mechanism of this layer and especially the influence of the post-deposition anneal on the Al2O3/Si interface properties is not yet completely understood. A great increase in the surface passivation is observed after a post-deposition anneal, i.e. a postdeposition anneal is mandatory to activate the surface passivation. Thus, the influence of this anneal on the interface properties, density of negative fixed charges Qf and density of interface traps Dit, will be investigated and correlated to the measured minority carrier lifetime. In the case of plasma enhanced ALD, Qf is already high in the as-deposited state and the annealing process only has a minor effect on Qf (Q f increases by 20-50 %, depending on the annealing temperature). The Dit however is strongly reduced by the post-deposition anneal, decreasing by two orders of magnitude. This large reduction in Dit is a prerequisite for benefiting from the strong field effect induced by the high density of negative charges of the Al2O3.

AB - While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-type doped silicon surfaces, the passivation mechanism of this layer and especially the influence of the post-deposition anneal on the Al2O3/Si interface properties is not yet completely understood. A great increase in the surface passivation is observed after a post-deposition anneal, i.e. a postdeposition anneal is mandatory to activate the surface passivation. Thus, the influence of this anneal on the interface properties, density of negative fixed charges Qf and density of interface traps Dit, will be investigated and correlated to the measured minority carrier lifetime. In the case of plasma enhanced ALD, Qf is already high in the as-deposited state and the annealing process only has a minor effect on Qf (Q f increases by 20-50 %, depending on the annealing temperature). The Dit however is strongly reduced by the post-deposition anneal, decreasing by two orders of magnitude. This large reduction in Dit is a prerequisite for benefiting from the strong field effect induced by the high density of negative charges of the Al2O3.

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T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

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BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010

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