Effect of boron concentration on recombination at the p -Si-Al 2O3 interface

Lachlan E. Black; Thomas Allen; Keith R. McIntosh; Andres Cuevas

doi:10.1063/1.4867643

Effect of boron concentration on recombination at the p -Si-Al ₂O₃ interface

Lachlan E. Black, Thomas Allen, Keith R. McIntosh, Andres Cuevas

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41 Citations (Scopus)

Abstract

We examine the surface passivation properties of Al₂O ₃ deposited on boron-doped planar âŸ̈100âŸ

Original language	English
Article number	093707
Journal	Journal of Applied Physics
Volume	115
Issue number	9
DOIs	https://doi.org/10.1063/1.4867643
Publication status	Published - 7 Mar 2014

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title = "Effect of boron concentration on recombination at the p -Si-Al 2O3 interface",

abstract = "We examine the surface passivation properties of Al2O 3 deposited on boron-doped planar {\^a}{\"Ÿ}100{\^a}Ÿ",

author = "Black, {Lachlan E.} and Thomas Allen and McIntosh, {Keith R.} and Andres Cuevas",

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AU - Black, Lachlan E.

AU - Allen, Thomas

AU - McIntosh, Keith R.

AU - Cuevas, Andres

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N2 - We examine the surface passivation properties of Al2O 3 deposited on boron-doped planar âŸ̈100âŸ

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 093707

ER -

Effect of boron concentration on recombination at the p -Si-Al ₂O₃ interface

Abstract

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