Effect of boron concentration on recombination at the p -Si-Al 2O3 interface

Lachlan E. Black; Thomas Allen; Keith R. McIntosh; Andres Cuevas

doi:10.1063/1.4867643

Effect of boron concentration on recombination at the p -Si-Al ₂O₃ interface

Lachlan E. Black
, Thomas Allen
, Keith R. McIntosh
, Andres Cuevas

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

We examine the surface passivation properties of Al₂O ₃ deposited on boron-doped planar âŸ̈100âŸ

Original language	English
Article number	093707
Journal	Journal of Applied Physics
Volume	115
Issue number	9
DOIs	https://doi.org/10.1063/1.4867643
Publication status	Published - 7 Mar 2014

Access to Document

10.1063/1.4867643

Cite this

@article{2a69c4329e3e4a3790551c3922d13fe4,

title = "Effect of boron concentration on recombination at the p -Si-Al 2O3 interface",

abstract = "We examine the surface passivation properties of Al2O 3 deposited on boron-doped planar {\^a}{\"Ÿ}100{\^a}Ÿ",

author = "Black, \{Lachlan E.\} and Thomas Allen and McIntosh, \{Keith R.\} and Andres Cuevas",

year = "2014",

month = mar,

day = "7",

doi = "10.1063/1.4867643",

language = "English",

volume = "115",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Effect of boron concentration on recombination at the p -Si-Al 2O3 interface

AU - Black, Lachlan E.

AU - Allen, Thomas

AU - McIntosh, Keith R.

AU - Cuevas, Andres

PY - 2014/3/7

Y1 - 2014/3/7

N2 - We examine the surface passivation properties of Al2O 3 deposited on boron-doped planar âŸ̈100âŸ

AB - We examine the surface passivation properties of Al2O 3 deposited on boron-doped planar âŸ̈100âŸ

UR - https://www.scopus.com/pages/publications/84896753743

U2 - 10.1063/1.4867643

DO - 10.1063/1.4867643

M3 - Article

SN - 0021-8979

VL - 115

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 093707

ER -

Effect of boron concentration on recombination at the p -Si-Al ₂O₃ interface

Abstract

Access to Document

Other files and links

Fingerprint

Cite this