Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon

J. C. McCallum; B. J. Villis; B. C. Johnson; N. Stavrias; J. E. Burgess; S. Charnvanichborikarn; J. Wong-Leung; J. S. Williams; C. Jagadish

doi:10.1002/pssa.201000380

Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon

J. C. McCallum, B. J. Villis, B. C. Johnson, N. Stavrias, J. E. Burgess, S. Charnvanichborikarn, J. Wong-Leung, J. S. Williams, C. Jagadish

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Abstract

The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial-related centres, particularly the W-centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon-interstitial and boron-interstitial centre formation is considered to be a possible mechanism underlying this dramatic reduction. Previous work on silicon implantation of boron-doped substrates is extended to examine the effect of B implantation itself on W-centre formation. W centres formed via the implantation of B and a low temperature anneal and via a Si implant over an activated B-implant profile followed by low temperature anneal are compared. These studies contrast the effects of boron and silicon implantation and examine the effect of overlapping implantation profiles. Studying the effect of boron on optical centre formation provides insight into defect interactions in silicon and new data for theoretical modelling.

Original language	English
Pages (from-to)	620-623
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	208
Issue number	3
DOIs	https://doi.org/10.1002/pssa.201000380
Publication status	Published - Mar 2011

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McCallum, J. C., Villis, B. J., Johnson, B. C., Stavrias, N., Burgess, J. E., Charnvanichborikarn, S., Wong-Leung, J., Williams, J. S., & Jagadish, C. (2011). Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon. Physica Status Solidi (A) Applications and Materials Science, 208(3), 620-623. https://doi.org/10.1002/pssa.201000380

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title = "Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon",

abstract = "The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial-related centres, particularly the W-centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon-interstitial and boron-interstitial centre formation is considered to be a possible mechanism underlying this dramatic reduction. Previous work on silicon implantation of boron-doped substrates is extended to examine the effect of B implantation itself on W-centre formation. W centres formed via the implantation of B and a low temperature anneal and via a Si implant over an activated B-implant profile followed by low temperature anneal are compared. These studies contrast the effects of boron and silicon implantation and examine the effect of overlapping implantation profiles. Studying the effect of boron on optical centre formation provides insight into defect interactions in silicon and new data for theoretical modelling.",

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year = "2011",

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T1 - Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon

AU - McCallum, J. C.

AU - Villis, B. J.

AU - Johnson, B. C.

AU - Stavrias, N.

AU - Burgess, J. E.

AU - Charnvanichborikarn, S.

AU - Wong-Leung, J.

AU - Williams, J. S.

AU - Jagadish, C.

PY - 2011/3

Y1 - 2011/3

N2 - The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial-related centres, particularly the W-centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon-interstitial and boron-interstitial centre formation is considered to be a possible mechanism underlying this dramatic reduction. Previous work on silicon implantation of boron-doped substrates is extended to examine the effect of B implantation itself on W-centre formation. W centres formed via the implantation of B and a low temperature anneal and via a Si implant over an activated B-implant profile followed by low temperature anneal are compared. These studies contrast the effects of boron and silicon implantation and examine the effect of overlapping implantation profiles. Studying the effect of boron on optical centre formation provides insight into defect interactions in silicon and new data for theoretical modelling.

AB - The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial-related centres, particularly the W-centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon-interstitial and boron-interstitial centre formation is considered to be a possible mechanism underlying this dramatic reduction. Previous work on silicon implantation of boron-doped substrates is extended to examine the effect of B implantation itself on W-centre formation. W centres formed via the implantation of B and a low temperature anneal and via a Si implant over an activated B-implant profile followed by low temperature anneal are compared. These studies contrast the effects of boron and silicon implantation and examine the effect of overlapping implantation profiles. Studying the effect of boron on optical centre formation provides insight into defect interactions in silicon and new data for theoretical modelling.

KW - W-centre formation

KW - boron interactions

KW - defects

KW - interstitial-related

KW - ion implantation

UR - https://www.scopus.com/pages/publications/79952491844

U2 - 10.1002/pssa.201000380

DO - 10.1002/pssa.201000380

M3 - Article

SN - 1862-6300

VL - 208

SP - 620

EP - 623

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 3

ER -

Effect of boron on formation of interstitial-related luminescence centres in ion implanted silicon

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