Effect of boron on interstitial-related luminescence centers in silicon

S. Charnvanichborikarn; B. J. Villis; B. C. Johnson; J. Wong-Leung; J. C. McCallum; J. S. Williams; C. Jagadish

doi:10.1063/1.3300836

Effect of boron on interstitial-related luminescence centers in silicon

S. Charnvanichborikarn^*, B. J. Villis, B. C. Johnson, J. Wong-Leung, J. C. McCallum, J. S. Williams, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525°C. The presence of boron in p-type silicon is found to produce deleterious effects on the luminescence of the interstitial-related W - and X -centers as well as a lower energy broad luminescence band. This effect has not been previously reported but it is consistent with the suppression of interstitial-related {311} extended defect formation in the presence of high boron concentrations at higher annealing temperatures. The results presented in this letter provide insight into the role of boron in the initial stages of interstitial cluster formation.

Original language	English
Article number	051906
Journal	Applied Physics Letters
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.3300836
Publication status	Published - 2010

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abstract = "Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525°C. The presence of boron in p-type silicon is found to produce deleterious effects on the luminescence of the interstitial-related W - and X -centers as well as a lower energy broad luminescence band. This effect has not been previously reported but it is consistent with the suppression of interstitial-related {311} extended defect formation in the presence of high boron concentrations at higher annealing temperatures. The results presented in this letter provide insight into the role of boron in the initial stages of interstitial cluster formation.",

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AU - Charnvanichborikarn, S.

AU - Villis, B. J.

AU - Johnson, B. C.

AU - Wong-Leung, J.

AU - McCallum, J. C.

AU - Williams, J. S.

AU - Jagadish, C.

PY - 2010

Y1 - 2010

N2 - Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525°C. The presence of boron in p-type silicon is found to produce deleterious effects on the luminescence of the interstitial-related W - and X -centers as well as a lower energy broad luminescence band. This effect has not been previously reported but it is consistent with the suppression of interstitial-related {311} extended defect formation in the presence of high boron concentrations at higher annealing temperatures. The results presented in this letter provide insight into the role of boron in the initial stages of interstitial cluster formation.

AB - Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525°C. The presence of boron in p-type silicon is found to produce deleterious effects on the luminescence of the interstitial-related W - and X -centers as well as a lower energy broad luminescence band. This effect has not been previously reported but it is consistent with the suppression of interstitial-related {311} extended defect formation in the presence of high boron concentrations at higher annealing temperatures. The results presented in this letter provide insight into the role of boron in the initial stages of interstitial cluster formation.

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JF - Applied Physics Letters

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Effect of boron on interstitial-related luminescence centers in silicon

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