Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

J. Wong-Leung*, M. S. Janson, B. G. Svensson

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    45 Citations (Scopus)

    Abstract

    The effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals was analyzed. The [112̄0] channel was found to exhibit the deepest channeling with a maximum penetration depth 45 times greater than the projected range of the random implants. Significant channeling was also observed for the {112̄0} and the {0001} planar channels while the implants in the {101̄0} planar channels did not differ from the corresponding random implants.

    Original languageEnglish
    Pages (from-to)8914-8917
    Number of pages4
    JournalJournal of Applied Physics
    Volume93
    Issue number11
    DOIs
    Publication statusPublished - 1 Jun 2003

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