Abstract
The effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals was analyzed. The [112̄0] channel was found to exhibit the deepest channeling with a maximum penetration depth 45 times greater than the projected range of the random implants. Significant channeling was also observed for the {112̄0} and the {0001} planar channels while the implants in the {101̄0} planar channels did not differ from the corresponding random implants.
Original language | English |
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Pages (from-to) | 8914-8917 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1 Jun 2003 |