Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectrics

M. N. Saleh; D. K. Venkatachalam; R. G. Elliman

doi:10.1016/j.cap.2013.11.017

Effect of crystallization on the reliability of unipolar resistive-switching in HfO₂-based dielectrics

M. N. Saleh, D. K. Venkatachalam, R. G. Elliman^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The electroforming and unipolar resistive switching characteristics of as-deposited and annealed HfO₂ and Hf_0.6Si _0.4O₂ films are reported. The reliability of HfO ₂ devices is shown to be significantly degraded by annealing at 600 °C, during which the film is observed to crystallize. In contrast, the characteristics of Hf_0.6Si_0.4O₂ devices subjected to the same annealing conditions are found to be unchanged, consistent with the fact that the films remain amorphous. These differences are attributed to the presence of grain boundaries and can have important implications for the use of HfO₂ in ReRAM applications.

Original language	English
Pages (from-to)	S88-S92
Journal	Current Applied Physics
Volume	14
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.cap.2013.11.017
Publication status	Published - 14 Mar 2014

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title = "Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectrics",

abstract = "The electroforming and unipolar resistive switching characteristics of as-deposited and annealed HfO2 and Hf0.6Si 0.4O2 films are reported. The reliability of HfO 2 devices is shown to be significantly degraded by annealing at 600 °C, during which the film is observed to crystallize. In contrast, the characteristics of Hf0.6Si0.4O2 devices subjected to the same annealing conditions are found to be unchanged, consistent with the fact that the films remain amorphous. These differences are attributed to the presence of grain boundaries and can have important implications for the use of HfO2 in ReRAM applications.",

keywords = "Amorphous, Grain boundary, Hafnium oxide, Hafnium silicate, ReRAM, Resistive switching, Unipolar switching",

author = "Saleh, {M. N.} and Venkatachalam, {D. K.} and Elliman, {R. G.}",

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TY - JOUR

T1 - Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectrics

AU - Saleh, M. N.

AU - Venkatachalam, D. K.

AU - Elliman, R. G.

PY - 2014/3/14

Y1 - 2014/3/14

N2 - The electroforming and unipolar resistive switching characteristics of as-deposited and annealed HfO2 and Hf0.6Si 0.4O2 films are reported. The reliability of HfO 2 devices is shown to be significantly degraded by annealing at 600 °C, during which the film is observed to crystallize. In contrast, the characteristics of Hf0.6Si0.4O2 devices subjected to the same annealing conditions are found to be unchanged, consistent with the fact that the films remain amorphous. These differences are attributed to the presence of grain boundaries and can have important implications for the use of HfO2 in ReRAM applications.

AB - The electroforming and unipolar resistive switching characteristics of as-deposited and annealed HfO2 and Hf0.6Si 0.4O2 films are reported. The reliability of HfO 2 devices is shown to be significantly degraded by annealing at 600 °C, during which the film is observed to crystallize. In contrast, the characteristics of Hf0.6Si0.4O2 devices subjected to the same annealing conditions are found to be unchanged, consistent with the fact that the films remain amorphous. These differences are attributed to the presence of grain boundaries and can have important implications for the use of HfO2 in ReRAM applications.

KW - Amorphous

KW - Grain boundary

KW - Hafnium oxide

KW - Hafnium silicate

KW - ReRAM

KW - Resistive switching

KW - Unipolar switching

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DO - 10.1016/j.cap.2013.11.017

M3 - Article

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SP - S88-S92

JO - Current Applied Physics

JF - Current Applied Physics

IS - SUPPL. 1

ER -

Effect of crystallization on the reliability of unipolar resistive-switching in HfO₂-based dielectrics

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