TY - JOUR
T1 - Effect of doping on the radiation response of conductive Nb-SrTiO 3
AU - Li, Weixing
AU - Rodriguez, Matias D.
AU - Kluth, Patrick
AU - Lang, Maik
AU - Medvedev, Nikita
AU - Sorokin, Michael
AU - Zhang, Jiaming
AU - Afra, Boshra
AU - Bender, Markus
AU - Severin, Daniel
AU - Trautmann, Christina
AU - Ewing, Rodney C.
PY - 2013
Y1 - 2013
N2 - Based on the Coulomb spike model, track formation depends strongly on the electrical resistivity of a material, and ion tracks form only in insulating materials. However, there are no systemic studies of the effect of resistivity on the track formation in materials, such as SrTiO3 (STO), where with the addition of low concentrations of Nb, the resistivity dramatically decreases covering the entire electronic regime from an insulating to conducting material. In this study, high energy (8.6 MeV/u) ion-induced track formation in STO was characterized by transmission electron microscopy (TEM) and small-angle X-ray scattering (SAXS) techniques as a function of Nb-doping concentrations. Contrary to the Coulomb spike model's predictions, the Nb-doping had no evident influence on track formation, as confirmed by both TEM and SAXS. This may be the result of the low electron density in the bulk material or the minor effect of the Nb-doping on the bonding in the material. In situ TEM studies of low energy (1 MeV Kr2+) ion irradiations show that the low concentration doping has a minor influence on the crystalline-to-amorphous transformation as a result of subtle structural variations of incorporated impurity atoms.
AB - Based on the Coulomb spike model, track formation depends strongly on the electrical resistivity of a material, and ion tracks form only in insulating materials. However, there are no systemic studies of the effect of resistivity on the track formation in materials, such as SrTiO3 (STO), where with the addition of low concentrations of Nb, the resistivity dramatically decreases covering the entire electronic regime from an insulating to conducting material. In this study, high energy (8.6 MeV/u) ion-induced track formation in STO was characterized by transmission electron microscopy (TEM) and small-angle X-ray scattering (SAXS) techniques as a function of Nb-doping concentrations. Contrary to the Coulomb spike model's predictions, the Nb-doping had no evident influence on track formation, as confirmed by both TEM and SAXS. This may be the result of the low electron density in the bulk material or the minor effect of the Nb-doping on the bonding in the material. In situ TEM studies of low energy (1 MeV Kr2+) ion irradiations show that the low concentration doping has a minor influence on the crystalline-to-amorphous transformation as a result of subtle structural variations of incorporated impurity atoms.
KW - Amorphization
KW - Conductivity
KW - Non-thermal process
KW - SrTiO
KW - Thermal spike
KW - Track formation
UR - http://www.scopus.com/inward/record.url?scp=84876532723&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2013.03.010
DO - 10.1016/j.nimb.2013.03.010
M3 - Article
SN - 0168-583X
VL - 302
SP - 40
EP - 47
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ER -