Effect of GaP strain compensation layers on rapid thermally annealed InGaAsGaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

L. Fu; I. McKerracher; H. H. Tan; C. Jagadish; N. Vukmirović; P. Harrison

doi:10.1063/1.2770765

Effect of GaP strain compensation layers on rapid thermally annealed InGaAsGaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

L. Fu^*, I. McKerracher, H. H. Tan, C. Jagadish, N. Vukmirović, P. Harrison

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effect of GaP strain compensation layers was investigated on ten-layer InGaAsGaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.

Original language	English
Article number	073515
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2770765
Publication status	Published - 2007

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title = "Effect of GaP strain compensation layers on rapid thermally annealed InGaAsGaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition",

abstract = "The effect of GaP strain compensation layers was investigated on ten-layer InGaAsGaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.",

author = "L. Fu and I. McKerracher and Tan, {H. H.} and C. Jagadish and N. Vukmirovi{\'c} and P. Harrison",

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AU - Fu, L.

AU - McKerracher, I.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Vukmirović, N.

AU - Harrison, P.

PY - 2007

Y1 - 2007

N2 - The effect of GaP strain compensation layers was investigated on ten-layer InGaAsGaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.

AB - The effect of GaP strain compensation layers was investigated on ten-layer InGaAsGaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.

UR - http://www.scopus.com/inward/record.url?scp=34548010528&partnerID=8YFLogxK

U2 - 10.1063/1.2770765

DO - 10.1063/1.2770765

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 073515

ER -

Effect of GaP strain compensation layers on rapid thermally annealed InGaAsGaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

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