Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

Tianfeng Li, Yonghai Chen*, Wen Lei, Xiaolong Zhou, Shuai Luo, Yongzheng Hu, Lijun Wang, Tao Yang, Zhanguo Wang

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    22 Citations (Scopus)

    Abstract

    Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO) mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed.

    Original languageEnglish
    Article number463
    Pages (from-to)1-7
    Number of pages7
    JournalNanoscale Research Letters
    Volume6
    DOIs
    Publication statusPublished - 2011

    Fingerprint

    Dive into the research topics of 'Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates'. Together they form a unique fingerprint.

    Cite this