TY - JOUR
T1 - Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
AU - Li, Tianfeng
AU - Chen, Yonghai
AU - Lei, Wen
AU - Zhou, Xiaolong
AU - Luo, Shuai
AU - Hu, Yongzheng
AU - Wang, Lijun
AU - Yang, Tao
AU - Wang, Zhanguo
PY - 2011
Y1 - 2011
N2 - Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO) mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed.
AB - Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO) mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed.
UR - http://www.scopus.com/inward/record.url?scp=84862908649&partnerID=8YFLogxK
U2 - 10.1186/1556-276x-6-463
DO - 10.1186/1556-276x-6-463
M3 - Article
SN - 1931-7573
VL - 6
SP - 1
EP - 7
JO - Nanoscale Research Letters
JF - Nanoscale Research Letters
M1 - 463
ER -