Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Y. N. Guo; J. Zou; H. J. Joyce; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2010.5699774

Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Y. N. Guo, J. Zou^*, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	51-52
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699774
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

Access to Document

10.1109/COMMAD.2010.5699774

Cite this

Guo, Y. N., Zou, J., Joyce, H. J., Gao, Q., Tan, H. H., & Jagadish, C. (2010). Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 51-52). Article 5699774 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699774

@inproceedings{9ba4e113283b4f5098d9773a0d5fbf82,

title = "Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD",

abstract = "The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.",

author = "Guo, {Y. N.} and J. Zou and Joyce, {H. J.} and Q. Gao and Tan, {H. H.} and C. Jagadish",

year = "2010",

doi = "10.1109/COMMAD.2010.5699774",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "51--52",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Guo, YN, Zou, J, Joyce, HJ, Gao, Q, Tan, HH & Jagadish, C 2010, Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699774, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 51-52, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699774

Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. / Guo, Y. N.; Zou, J.; Joyce, H. J. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 51-52 5699774 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

AU - Guo, Y. N.

AU - Zou, J.

AU - Joyce, H. J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2010

Y1 - 2010

N2 - The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.

AB - The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.

UR - http://www.scopus.com/inward/record.url?scp=79951763312&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2010.5699774

DO - 10.1109/COMMAD.2010.5699774

M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 51

EP - 52

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Guo YN, Zou J, Joyce HJ, Gao Q, Tan HH , Jagadish C. Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 51-52. 5699774. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699774

Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this