Effect of implant temperature on extended defects created by ion implantation in silicon

Extended defects created by ion implantation have been shown to be dependent on the implantation conditions and the annealing conditions. In this paper, we study the effect of implant temperature on defects created by medium dose ion implantation in silicon. We report a difference in the type of extended defects created by identical Sn implants in samples subject to different implant temperatures while very little difference is observed in the type of defects created by Si implantation in silicon. A complete transmission electron microscopy characterization of the defects was carried out showing rod-like defects for the Si implanted samples. In the case of the Sn implants, we observe a trend towards a higher density of rod-like defects and larger loops with increasing implant temperatures.