@inproceedings{d055c1f8ca98400f8c76fd48b4044c04,
title = "Effect of ion-implantation on forming and resistive-switching response of NiO thin films",
abstract = "The forming voltage and set/reset response of sputter-deposited NiO thin films is studied as a function of implant fluence for samples implanted with Ni and O ions. The forming voltage of the films is shown to decrease with increasing ion fluence and to scale with the damage production rate of the different ions. In contrast, the set/reset response of the films was largely unaffected by the ion-implantation. These results are discussed in terms of the filamentary model of conduction and the thermochemical model of resistive switching.",
author = "Elliman, {Robert G.} and Saleh, {Muhammad N.} and Sung Kim and Venkatachalam, {Dinesh K.} and Taehyun Kim and Kidane Belay",
year = "2010",
doi = "10.1557/proc-1250-g05-06",
language = "English",
isbn = "9781605112237",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "215--220",
booktitle = "Materials and Physics for Nonvolatile Memories II",
}